Abstract:The ability to minimize the thermal conductivity of dielectrics with minimal structural intervention that could affect electrical properties is an important capability for engineering thermoelectric efficiency in low-cost materials such as Si. We recently reported the discovery of special arrangements for nanoscale pores in Si that produce a particularly large reduction in thermal conductivity accompanied by strongly anticorrelated heat current fluctuations, a phenomenon that is missed by the diffuse adiabatic boundary conditions conventionally used in numerical Boltzmann transport models. This manuscript presents the results of molecular dynamics simulations and a Monte Carlo ray tracing model that teases apart this phenomenon to reveal that special pore layouts elastically backscatter long-wavelength heat-carrying phonons. This means that heat carriage by a phonon before scattering is undone by the scattered phonon, resulting in an effective mean-free-path that is significantly shorter than the geometric line-of-sight to the pores. This effect is particularly noticeable for the long-wavelength, long mean-free-path phonons whose transport is impeded drastically more than is expected purely from the usual considerations of scattering defined by the distance between defects. This super-suppression of the mean-free-path below the characteristic length scale of the nanostructuring offers a route for minimizing thermal conductivity with minimal structural impact, while the stronger impact on long wavelengths offers possibilities for the design of band-pass phonon filtering. Moreover, the ray tracing model developed in this paper shows that different forms of correlated scattering imprint a unique signature in the heat current autocorrelation function that could be used as a diagnostic in other nanostructured systems.

Phonon scattering in doped silicon by molecular dynamics simulation

Influence of Point Defects and Multiscale Pores on the Different Phonon Transport Regimes

Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si

Tuning the Thermal Conductivity of Silicon Phononic Crystals Via Defect Motifs: Implications for Thermoelectric Devices and Photovoltaics

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single‐Crystal Si

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Probing the phonon mean free paths in dislocation core by molecular dynamics simulation

Interference, scattering, and transmission of acoustic phonons in Si phononic crystals

Monte Carlo simulations for phonon transport in silicon nanomaterials

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Thermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering

First-principles ionized-impurity scattering and charge transport in doped materials

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Investigation of the Doping Failure Induced by Db in the Sinws Using First Principles Method

Phonon Knudsen flow in nanostructured semiconductor systems

Intrasubband electron-phonon scattering in doped thin-layer inserted quantum well

Surface Morphology and Strain Coupling Effects on Phonon Transport in Silicon Nanowires

Obtaining the Phonon Mean Free Paths of Inhomogeneous Materials using Molecular Dynamics Dislocation Core

Phonon-bond strength imperfection scattering mechanism in nanostructures