Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Thermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering

Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si

Influence of Point Defects and Multiscale Pores on the Different Phonon Transport Regimes

Thermal Conductivity of Cubic Silicon Carbide Single Crystals Heavily Doped by Nitrogen

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single‐Crystal Si

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Thermal Conductivity Study of 2D Si4C8 material by Anharmonic Phonon Renormalization

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Quasi-Ballistic Thermal Conduction in 6H-SiC

The Temperature-Dependent Thermal Conductivity of C- and O-Doped Si3N4: First-Principles Calculations

Thermal conductivity of intrinsic semiconductor at elevated temperature: role of four-phonon scattering and electronic heat conduction

The role of lattice thermal conductivity suppression by dopants from a holistic perspective

Nanoscale limit of the thermal conductivity in crystalline silicon carbide membranes, nanowires, and phononic crystals

Significant phase-space-driven thermal transport suppression in BC8 silicon

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Structural Characteristics and Quantum Chemistry Calculation of Si-Doped Boron Carbides