Abstract:The mechanisms causing the reduction in lattice thermal conductivity in highly P- and B-doped Si are looked into in detail. Scattering rates of phonons by point defects, as well as by electrons, are calculated from first principles. Lattice thermal conductivities are calculated considering these scattering mechanisms both individually and together. It is found that at low carrier concentrations and temperatures phonon scattering by electrons is dominant and can reproduce the experimental thermal conductivity reduction. However, at higher doping concentrations the scattering rates of phonons by point defects dominate the ones by electrons except for the lowest phonon frequencies. Consequently, phonon scattering by point defects contributes substantially to the thermal conductivity reduction in Si at defect concentrations above $10^{19}$ cm$^{-3}$ even at room temperature. Only when, phonon scattering by both point defects and electrons are taken into account, excellent agreement is obtained with the experimental values at all temperatures.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: In highly doped (P - type and B - type doped) silicon materials, what are the specific mechanisms for the reduction of lattice thermal conductivity (κℓ)? Specifically, the author aims to explain the influence of electron - phonon scattering (EPS) and point - defect phonon scattering (PDPS) on thermal conductivity, and explore how these two scattering mechanisms work together to cause a significant decrease in thermal conductivity. ### Main problem background: 1. **Applications of highly doped Si**: Highly doped silicon (Si) is widely used in electronic devices, energy conversion devices, etc., especially in the source/drain materials of transistors, photovoltaic devices, micro - electro - mechanical systems and microelectronics. High doping can improve electrical performance, but also significantly reduces thermal conductivity. 2. **Differences between theory and experiment**: Previous studies have differences in the reasons for the reduction of thermal conductivity in highly doped Si. Some studies believe that it is mainly due to electron - phonon scattering (EPS), while others emphasize point - defect phonon scattering (PDPS). These differences stem from the use of simplified models and insufficient understanding of the underlying physical mechanisms. ### Research objectives: - **Detailed calculation and comparison**: Calculate the influence of electron - phonon scattering and point - defect phonon scattering on thermal conductivity from first - principles to determine which mechanism dominates at different doping concentrations and temperatures. - **Comprehensive explanation**: Combine the two scattering mechanisms to explain the changes in thermal conductivity observed in experiments, especially the significant reduction at high doping concentrations. - **Predict the behavior at high doping levels**: For extremely high doping concentrations (such as 10^20 cm^-3 and 10^21 cm^-3) where there is currently a lack of experimental data, make theoretical predictions and provide reasonable explanations. ### Key conclusions: - **At low doping concentrations**: Electron - phonon scattering (EPS) plays a major role at low doping concentrations and low temperatures, and can well explain the reduction of thermal conductivity observed in experiments. - **At high doping concentrations**: As the doping concentration increases, point - defect phonon scattering (PDPS) gradually becomes dominant, especially at doping concentrations higher than 10^19 cm^-3, and the contribution of PDPS to the reduction of thermal conductivity becomes particularly significant. - **Comprehensive consideration**: Only by considering electron - phonon scattering and point - defect phonon scattering simultaneously can good agreement with experimental results be achieved across the entire temperature range. For example, at room temperature, when the doping concentration reaches 10^21 cm^-3, the thermal conductivity of B - type doped Si can be reduced by about 90%, and the thermal conductivity of P - type doped Si is reduced by about 80%. Through these studies, the author has revealed the complex mechanisms for the reduction of thermal conductivity in highly doped Si and provided theoretical support for future designs and applications.

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