Abstract:<p>While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature conditions. Most previous studies only focused on the phononic contribution, and neglected the electronic part. In this paper, we present a Boltzmann transport equation study on high-temperature thermal conduction in bulk silicon by considering the effects of both phonons and electrons. Both polar and bipolar contributions to the electronic thermal conductivity are calculated from first-principles. More than 25% of heat is shown to be conducted by electrons at 1500 K. The computed total thermal conductivity of silicon faithfully reproduces the measured data. The approach presented in this paper is expected to be applied to other high-temperature functional materials, and the results could serve as benchmarks and help to explain the high-temperature phonon and electron transport phenomena.</p>

What problem does this paper attempt to address?

This paper aims to solve the problem of the accuracy of thermal conductivity prediction of silicon materials under high - temperature conditions. Specifically, the paper focuses on the influence of four - phonon scattering and electronic heat conduction on the thermal conductivity of silicon materials at high temperatures. The following are the main research questions of the paper: 1. **Limitations of existing methods**: Currently, the Boltzmann Transport Equation (BTE) method based on first - principles is relatively mature in predicting the thermal conductivity of semiconductor materials. However, these methods usually only consider the phonon contribution and ignore the electronic part. In addition, most studies focus on prediction under medium - temperature conditions, and their validity under high - temperature conditions has not been fully verified. 2. **Complexity under high - temperature conditions**: As the temperature rises, high - order phonon - phonon scattering (such as four - phonon scattering) becomes non - negligible, and at the same time, the lattice constant and Interatomic Force Constants (IFCs) will also change. These factors will all affect the prediction of thermal conductivity. 3. **Importance of electronic heat conduction**: At high temperatures, the contribution of electronic heat conduction to the total thermal conductivity increases significantly. Especially at 1500 K, electronic heat conduction can account for more than 25% of the total heat conduction. Therefore, it is necessary to consider the influence of electronic heat conduction to improve the accuracy of prediction. 4. **Establishment of a comprehensive model**: The paper proposes a BTE method that comprehensively considers the phonon and electronic contributions, and extracts the necessary input parameters through first - principles calculations. This method not only considers three - phonon scattering, but also systematically considers four - phonon scattering and temperature - dependent IFCs for the first time, as well as the polarization and bipolar contributions of electronic heat conduction. Through these studies, the paper aims to provide a more comprehensive and accurate method for predicting the thermal conductivity of silicon materials under high - temperature conditions, thereby providing references and benchmarks for the research of other high - temperature functional materials.

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