Abstract:Sb2Se3 solar cells have achieved a power conversion efficiency (PCE) of over 10%. However, the serious open-circuit voltage deficit (VOC-deficit), induced by the hard-to-control crystal orientation and heterojunction interface reaction, limits the PCE of vapor transport deposition (VTD) processed Sb2Se3 solar cells. To overcome the VOC-deficit problem of VTD processed Sb2Se3 solar cells, herein, an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3 seed layer (WBSL) at CdS/Sb2Se3 heterojunction interface to improve the PCE of Sb2Se3 solar cells. The analysis results show that the introduced Sb2(S,Se)3 seed layer can enhance the [001] orientation of Sb2Se3 thin films, broaden the band gap of heterojunction interface, and realize a "Spike-like" conduction band alignment with DEc= 0.11 eV. In addition, thanks to the suppressed CdS/Sb2Se3 interface reaction after WBSL application, the depletion region width of Sb2Se3 solar cells is widened, and the quality of CdS/Sb2Se3 interface and the carrier transporting performance of Sb2Se3 solar cells are significantly improved as well. Moreover, the harmful Se vacancy defects near the front interface of Sb2Se3 solar cells can be greatly diminished by WBSL. Finally, the PCE of Sb2Se3 solar cells is improved from 7.0% to 7.6%; meanwhile the V OC is increased to 466 mV which is the highest value for the VTD derived Sb2Se3 solar cells. This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells. (c) 2024 Science Press Published by Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.

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