Chemical Etching Induced Surface Modification and Gentle Gradient Bandgap for Highly Efficient Sb2(S,Se)3 Solar Cell

Xiaomin Wang,Xiaoqiang Shi,Fan Zhang,Feifan Zhou,Pengju Zeng,Jun Song,Junle Qu
DOI: https://doi.org/10.1016/j.apsusc.2021.152193
IF: 6.7
2021-01-01
Applied Surface Science
Abstract:Recently, due to its excellent photovoltaic features, Sb-2(S,Se)(3) is regarded as a promising photovoltaic absorber material. However, the interfacial property of Sb-2(S,Se)(3)-based solar cell still needs to be studied due to limited efficiency improvement resulting from interfacial defects. In this paper, we focus on Sb-2(S,Se)(3) film prepared by hydrothermal method to investigate the effects of surface modification on the properties of the Sb-2(S,Se)(3) film as well as its solar cell performance. Interestingly, the chemical etching performed on Sb-2(S,Se)(3) film using potassium fluoride aqueous solution not only improved the crystallinity and uniformity of Sb-2(S,Se)(3) film but also decreased the interfacial defects, leading to a reduced carrier recombination loss of the device. As a result of chemical modification, the current density and fill factor of Sb-2(S,Se)(3)-based superstrate structure solar devices were improved, resulting in maximum efficiency of 9.58%. Overall, this research offers a comprehensive understanding of the hydrothermally processed Sb-2(S,Se)(3) film as well as a viable alternative method for reducing interfacial defects in other chalcogenide semiconductors.
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