Abstract:We present a systematic study of highly boron (B)-doped poly-silicon (p+-poly-Si) and ultrathin silicon oxide (SiOx) bi-layer structure, also named as p-TOPCon, as the hole-selective passivated contact on n-type c-Si wafer, where the SiOx layer is made with three methods of hot nitric acid oxidation SiOx (NAOS-SiOx), plasma-assisted nitrous-oxide (N2O) gas oxidation (PANO-SiOx), and thermal oxidation (Thermal-SiOx). We demonstrate that the SiOx has a strong influence on the passivation quality. The best result is achieved using the Thermal-SiOx, while the NAOS-SiOx is slightly inferior, but better than the PANO-SiOx. The p+-poly-Si/SiOx structures with the three SiOx layers achieve the optimized passivation quality at different annealing temperatures of 820 °C for the NAOS-SiOx, 880 °C for the PANO-SiOx, and 930 °C for the Thermal-SiOx. The other potential factors affecting the passivation quality are also studied. The most important observation is that the optimized p-TOPCon structures with the three SiOx layers have a similar B diffusion profile, which penetrates into the c-Si wafer about 50 nm with B concentration decreasing to ~1 × 1018 cm−3. However, the overall p+-poly-Si/SiOx is still much poorer than n+-poly-Si/SiOx in terms the passivation quality. The comparison of the τeff versus carrier injection intensity spectra suggests that the B–O complex is the passivation killer possibly, and the approaches to improve the p-TOPCon are searching the other elements to reduce the B–O defects. In addition, contact resistivity (ρc) measurements show that the Thermal-SiOx leads a higher ρc than the others, but its value is still low enough for high-efficiency solar cells.

High‐performance hole‐selective <scp> V <sub>2</sub> O <sub>X</sub> </scp> / <scp> SiO <sub>X</sub> </scp> / <scp> NiO <sub>X</sub> </scp> contact for crystalline silicon solar cells

Improved V 2 O X Passivating Contact for p ‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO X Tunnel Layer

Influence of contact characteristics of SnO2/P on fill factor of solar cell

Sn‐doped Nb2O5 films as effective hole‐selective passivating contacts for crystalline silicon solar cells

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

Atomic Layer Deposition of Vanadium Oxide as Hole‐Selective Contact for Crystalline Silicon Solar Cells

Electron‐Selective Strontium Oxide Contact for Crystalline Silicon Solar Cells with High Fill Factor

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

Hole Selective NiO Contact for Efficient Perovskite Solar Cells with Carbon Electrode

Novel interlayer boosting the performance of evaporated Cu2O hole‐selective contacts in Si solar cells

Solution-processed vanadium oxide by low-temperature annealing for silicon solar cells with hole selective contact

Exceptional Hole‐Selective Properties of Ta 2 O 5 Films via Sn 4+ Doping for High Performance Silicon Heterojunction Solar Cells

Tunable Hole Selective Transport by Solution‐processed MoO3‐x Via Doping for p‐Type Crystalline Silicon Solar Cells

Exceptional Hole-Selective Properties of Ta2O5 Films Via Sn4+ Doping for High Performance Silicon Heterojunction Solar Cells

Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Principles of dopant-free electron-selective contacts based on tunnel oxide/low work-function metal stacks and their applications in heterojunction solar cells

Sub‐Stochiometric Nickel Oxide Hole‐Selective Contacts in Solar Cells: Comparison of Simulations and Experiments with Sputtered Films

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Self‐Diffusion Effect Assisted TiO2/Li3PO4 Electron Selective Passivating Contact in Silicon Solar Cells Approaching 23% Efficiency

Full-Area i-a-Si:H/ATO/Mg Electron-Selective Contacts for Silicon Solar Cells