Realizing Overgrowth in the Homo-Pvt Process for 2 Inch AlN Single Crystals

Qiyue Zhao,Xingyu Zhu,Tong Han,Zeren Wang,Jiejun Wu,Tongjun Yu

DOI: https://doi.org/10.1039/d1ce01693h

IF: 3.756

2022-01-01

CrystEngComm

Abstract:Large-size AlN crystal homo-PVT process is distinguished by the growth of prismatic grains in a macroscopic 3-dimensional mode, and that overgrowth plays a key role in the merging of grains under a lateral overgrown c-plane surface.

What problem does this paper attempt to address?

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

chen changqing,yang li,shengchang chen,wu tian,senlin li,wang hu,zhang jin,wu zhihao,fang yanyan,jiangnan dai

2012-01-01

Abstract:Multi-growth approaches including pulsed atomic layer epitaxy and high temperature continuous growth were used to deposit AlN layers on sapphire. The results show that the crystal quality can be significantly improved by the this technique.
Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Li Zhang,Zenghua Wang,Hongjuan Cheng,Chenchen Fan,Yingmin Wang,Ying Zhang,Lei Jin,Zhanpin Lai

DOI: https://doi.org/10.1016/j.vacuum.2024.113286

IF: 4

2024-05-18

Vacuum

Abstract:The crystallization of aluminum nitride (AlN) hetero-epitaxial seeding on silicon carbide (SiC) by physical vapor transport (PVT), was systematically studied using XRD, UV-Vis, PL, SIMS, Raman and stress simulation. The evolution of crystal quality, transmittance, purity and residual stress of 2-inch AlN crystal in the growth process are described. The crystal quality of AlN growth layer gradually improves with the crystal thickness, as reflected in the decrease of XRD full width at half maximum (FWHM) from higher than 300 arcsec to 85 arcsec, SIMS yielded Si concentrations decreases from 10 20 cm -3 to 10 18 cm -3 , absorbance coefficient @320 nm from 56 cm -1 to 9 cm -1 , and simulated residual stress from 270 MPa to 50 MPa, indicating a comprehensively improved quality by simply increasing the crystal thickness of AlN crystal on SiC seed. Furthermore, a 2-inch crack-free AlN single crystal with high quality was successfully fabricated by inducing a layered structure.

materials science, multidisciplinary,physics, applied
Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

Qikun Wang,Dan Lei,Jiali Huang,Xiaojuan Sun,Dabing Li,Zhenxiang Zhou,Liang Wu

DOI: https://doi.org/10.3389/fmats.2022.1128468

2023-01-10

Frontiers in Materials

Abstract:Single crystalline aluminum nitride (sc-AlN or AlN) boules with a diameter of 3-inch (Φ76 mm) were successfully prepared by the physical vapor transport (PVT) process. The initial homoepitaxial growth run was performed on an aluminum nitride seed sliced from a Φ51 mm aluminum nitride boule, and diameter enlargement was conducted iteratively via the lateral expansion technique until a Φ76 mm boule was achieved. During the diameter expansion growth runs, the crystal shape transitioned from a hexagonal pyramid to a cylindrical pyramid. After the standard slicing and wafering processes, the as-obtained substrates were characterized by high-resolution X-ray diffraction (HRXRD), preferential chemical etching, and optical spectroscopy. The characterization results revealed that the aluminum nitride substrates showed good crystallinity and excellent UV transparency, although a slight quality deterioration was observed when the crystal size was expanded from Φ51 to Φ76 mm, while the deep-UV (DUV) transparency remained very similar to that of the aluminum nitride seeds. The Φ76 mm aluminum nitride boules obtained in this study are an important milestone towards achieving Φ100 mm (4-inch) aluminum nitride, which are essential for the rapid commercialization of deep-UV optoelectronics and ultra-wide bandgap (UWBG) electronics.

materials science, multidisciplinary
Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

D. Zhuang,Z. G. Herro,R. Schlesser,B. Raghothamachar,M. Dudley,Z. Sitar

DOI: https://doi.org/10.1007/s11664-006-0141-x

IF: 2.1

2006-01-01

Journal of Electronic Materials

Abstract:Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds were prepared from a self-seeded boule containing large single-crystalline grains. Seeded growth was interrupted several times in order to refill the AlN powder source, and a dedicated process scheme was used to ensure epitaxial growth on the seed surface, after prior exposure to air. The growth temperatures were in the range of 2200–2300°C, and the reactor pressure was in the range of 500–900 torr of UHP-grade nitrogen during each growth run. Under these growth conditions, a seed (10 mm diameter) expanded at an angle of 45°, and a larger single crystal up to 18 mm in diameter was obtained. The as-grown surface had three facets, of which facet (1120) was smooth and featureless while the other two, (4150) and (2570), showed serrated morphologies. The double-crystal x-ray rocking curve and glow discharge mass spectroscopy analysis confirmed that the grown crystal was of high crystalline quality with low impurity incorporation.
Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method

Danyang Fu,Dan Lei,Zhe Li,Gang Zhang,Jiali Huang,Xiaojuan Sun,Qikun Wang,Dabing Li,Jiang Wang,Liang Wu

DOI: https://doi.org/10.1021/acs.cgd.2c00240

2022-04-11

Abstract:Crack-free and parasitic-free Al-polar aluminum nitride (AlN) single crystals up to Φ56 mm were iteratively grown by the homoepitaxial physical vapor transport method. The detailed iterative growth processes from the spontaneous AlN boules to Φ56 mm single crystals were presented. Our growth experiments revealed that stable growth of large Al-polar crystals with good structural quality and UV transparency was possible using a pure tungsten setup. For each iteration, the initial expansion angle, which was dominated by the radial temperature gradient (ΔTr), reached 50–60° under our specific growth system and growth conditions and then gradually decreased to 10–20° during the growth process. For all as-grown crystals, mirror-like facets with a step-flow growth mode could be observed. However, the {101̅0} side planes were strongly suppressed when using larger AlN seeds. Material characterization showed that the full width at half maximum of symmetric and asymmetric high-resolution X-ray diffraction rocking curves was 84–144 arcsec and 45–70 arcsec, respectively. The average etch pit density evaluated by preferential chemical etching was approximately 8.5 × 104 cm–2. The optical transmission spectra revealed that the entire wafer exhibited excellent ultraviolet (UV) transparency, with absorption coefficients of 19–29 cm–1 in the UV range of 4.43–4.77 eV (260–280 nm).This article has not yet been cited by other publications.

chemistry, multidisciplinary,materials science,crystallography
Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

C. J. Peng,X. G. Yao,X. Y. Miao,S. W. Chen,Q. F. Lu,X. J. Han,D. Shi,Y. L. Shao,Y. Z. Wu,X. P. Hao

DOI: https://doi.org/10.1039/d3ce01045g

IF: 3.756

2024-01-27

CrystEngComm

Abstract:The growth process is crucial to achieve large-sized and high-quality aluminum nitride (AlN) crystals through the physical vapor transport (PVT) method. To investigate the influence of parameters on the growth of AlN crystals, a series of quasi-steady numerical simulations on the temperature distribution, growth rate, and partial pressure of Al vapor inside the growth cell were conducted based on a self-developed finite element mass transfer module in the COMSOL package, which considers the partial pressure of gas phases, for different growth temperatures and crucible positions. The simulation results show that increasing the growth temperature significantly augments the partial pressure of Al vapor and the growth rate in the growth cell. Simultaneously, variation of the crucible position substantially alters the temperature distribution and the transport direction of Al vapor inside the crucible. A novel heat sink on the top of the crucible was designed to impair the phenomenon of uneven crystal growth on the surface of the seed caused by the nonuniform radial temperature distribution. Compared to the original crucible, the radial temperature gradient of the optimized crucible was reduced by 37%, and the uniformity of seed surface growth was improved by 89%. This work guides the design of a novel crystal growth furnace and the preparation of high-quality AlN single crystals by the PVT method.

chemistry, multidisciplinary,crystallography
Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method

Zuoyan Qin,Wenliang Li,Guangze He,Jun Tan,Liying Yin,Jianhua Ji,Baikui Li,Zhenhua Sun,Honglei Wu

DOI: https://doi.org/10.1140/epjs/s11734-024-01388-9

2024-11-08

The European Physical Journal Special Topics

Abstract:Homogeneous diameter expansion growth is the preferred method for preparing large-sized AlN single crystals using the PVT method. However, chromatic aberration between the expansion and seed regions, as well as localized chromatic aberrations within the expansion region, are commonly observed, but not deeply investigated yet. This paper investigates the homoepitaxial lateral growth of AlN crystals using Al-polar face seeds and analyzes the crystal structure, composition, and optical properties of both the expansion and seed regions. XRD and Raman spectroscopy indicate no significant differences in crystallization quality between the expansion and seed regions. XPS and photoluminescence characterizations reveal that the light yellow color of the seed region is mainly due to defects. In contrast, the deeper yellow color in the expansion region is caused by – complex defects. Additionally, etching results exhibit a polarity reversal from the Al-polar to N-polar growth face in localized chromatic aberration region. The bonding angle of approximately at the bond (formation by the half-filled orbitals of the Al and N atoms) site, which occurs during the bonding of Al and N atoms, results in the polarity reversal during m-plane lateral growth. This work provides implications for the preparation of large-sized AlN single crystals.

physics, multidisciplinary
Surface Control of AlN Single Crystal Growth on SiC Substrate

Jiahao Chen,Qiyue Zhao,Huangshu Zhang,Zeren Wang,Hao Yang,Jiejun Wu,Tongjun Yu

DOI: https://doi.org/10.1021/acs.cgd.4c00444

IF: 4.01

2024-01-01

Crystal Growth & Design

Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.
Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Guo Jing-Wei,Huang Hui,Ren Xiao-Min,Yan Xin,Cai Shi-Wei,Guo Xin,Huang Yong-Qing,Wang Qi,Zhang Xia,Wang Wei

DOI: https://doi.org/10.1088/0256-307x/28/3/036101

2011-01-01

Chinese Physics Letters

Abstract:Zinc blende structure GaAs/AlGaAs core-multishell nanowires (NWs) are grown on a GaAs(111) B substrate by a two-temperature process using an Au-catalyzed vapor-liquid-solid mechanism and metal organic chemical vapor deposition, respectively. Defect-free radial heterostructure NWs are formed. It can be concluded that the NWs are grown with the main contributions from the direct impingement of the precursors onto the alloy droplets and little from adatom diffusion. The results indicate that the droplet acts as a catalyst rather than an adatom collector. The photoluminescence spectra reveal that the grown NWs have much higher optical efficiency than bare GaAs NWs.
Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Wenhao Cao,Shouzhi Wang,Ruixian Yu,Qiubo Li,Guodong Wang,Yajun Zhu,Yuzhu Wu,Lingshuang Lv,Jingliang Liu,Xiangang Xu,Lei Zhang

DOI: https://doi.org/10.1107/s1600576724009087

IF: 4.868

2024-10-18

Journal of Applied Crystallography

Abstract:The growth quality of AlN single crystals was improved by optimizing the crucible structure for Al vapor transport with the help of finite element simulation.In the conventional crucible structure for AlN crystal growth by physical vapor transport, owing to the long molecular transport path of Al vapor and the disruption of the gas flow by the presence of a deflector, the Al vapor easily forms polycrystals in the growth domain. The result is increased internal stress in the crystals and increased difficulty in growing large‐sized crystals. On this basis, with the help of finite element simulations, a novel crucible structure is designed. This crucible not only optimizes the gas transport but also increases the radial gradient of the AlN crystal surface, making the enhanced growth rate in the central region more obvious. The thermal stresses between the deflector and the crystal are also reduced. High‐quality AlN crystals with an FWHM of 79 arcsec were successfully grown with this structure, verifying the accuracy of finite element simulation of the growth of AlN crystals. Our work has important guiding significance for the growth of high‐quality AlN crystals.

chemistry, multidisciplinary,crystallography
Heterogeneous Growth of Single Crystals on Polycrystals

Zumin Wang,Lars P. H. Jeurgens,Lin Gu,Eric J. Mittemeijer

DOI: https://doi.org/10.1103/physrevb.95.094109

2017-01-01

Abstract:This work discloses a surprising, previously unknown heterogeneous growth mode. Namely, large-area, thin sheets of single-crystalline Ge were observed to grow laterally on top of a polycrystalline Al substrate, covering as many as tens of differently oriented Al grains at low temperatures. The observation of the Ge crystal-growth process by in situ heating transmission electron microscopy demonstrates an intriguing type of "faceted" growth: the growth of single-crystalline Ge thin sheets proceeding Al-grain by Al-grain on top of the polycrystalline Al substrate. The crystalline Ge growth front tends to align along the lines of intersection of the Al grain boundaries with the Al surface. Such an unusual heterogeneous growth mode has been shown to be a consequence of the strong anisotropy of the energy of the crystalline/crystalline (here: c-Ge/c-Al) interfaces.
Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

Shangfeng Liu,Jason Hoo,Zhaoying Chen,Long Yan,Tao Wang,Shanshan Sheng,Xiaoxiao Sun,Ye Yuan,Shiping Guo,Xinqiang Wang

DOI: https://doi.org/10.1002/pssr.202100363

2021-09-15

Abstract:Strain evolution of AlN grown on hole-type (HT) and pillar-type (PT) nano-patterned sapphire substrates (NPSSs) during epitaxial lateral overgrowth process is comparably studied. It is found that, after complete coalescence, the residual strain of AlN on HT-NPSS is tensile while AlN on PT-NPSS is almost strain-free. The different strain state is associated with different behaviors of crystal merging during the lateral overgrowth process, depending on the type of pattern. Then, UVC LED wafers are grown on two types of AlN templates with the distinctive strain states. It has been confirmed that AlN on HT-NPSS with tensile strain offers the advantage of producing a high quality AlGaN layer with a fairly-flat surface, which is the key point for fabricating high performance UVC LEDs.This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary
Seeded Growth of AlN on N- and Al-polar AlN Seeds by Physical Vapor Transport

ZG Herro,D Zhuang,R Schlesser,R Collazo,Z Sitar

DOI: https://doi.org/10.1016/j.jcrysgro.2005.10.074

IF: 1.8

2006-01-01

Journal of Crystal Growth

Abstract:We demonstrated seeded growth of AlN on large-area Al- and N-polar <0001>-oriented AlN seeds using the physical vapor transport method (PVT). In both cases, crystals having a diameter of 15mm were obtained from 5mm seeds. Based on growth step and terrace width analyses, it was found that the N-polar face was suitable for growth within a large window of growth parameters while the Al-polar seeds yielded high-quality crystals only at low supersaturation.
Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Bin Tang,Zehong Wan,Hongpo Hu,Liyan Gong,Shengjun Zhou

DOI: https://doi.org/10.1063/5.0048656

IF: 4

2021-06-28

Applied Physics Letters

Abstract:We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assists the annihilation of threading dislocations. Dislocation inclination was proposed to play a major role in the stress relaxation and dislocation reduction, which not only provides an effective misfit-dislocation component but also increases the dislocation reaction probability. By this method, crack-free 3.25 μm-thick AlN films were grown on flat sapphire substrate (FSS) and nano-patterned sapphire substrate (NPSS) at 1180 °C, and the full width at half maximum of (002)/(102) rocking curves was 204/408 and 152/323 arcsec for such AlN/FSS and AlN/NPSS templates.

physics, applied
Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Nan Xie,Fujun Xu,Na Zhang,Jing Lang,Jiaming Wang,Mingxing Wang,Yuanhao Sun,Baiyin Liu,Weikun Ge,Zhixin Qin,Xiangning Kang,Xuelin Yang,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.7567/1347-4065/ab456d

IF: 1.5

2019-01-01

Japanese Journal of Applied Physics

Abstract:A comprehensive strategy of crystal quality control for AlN grown on a nano-patterned sapphire substrate has been explored based on the period size effect. It is found that the crystalline perfection of AlN can be greatly improved by enlarging the period size from 1.0 to 1.4 μm, and the X-ray diffraction ω-scan FWHM values for (0002) and (10-12) planes reach 162 and 181 arcsec, respectively, owning to the significantly reduced area ratio of the coalescence zone. Our results indicate the pattern design requires a critical balance between reducing the area ratio of the coalescence zone and decreasing the coalescence thickness.
Growth of Aln Single Crystalline Boules

Z. G. Herro,D. Zhuang,R. Schlesser,Z. Sitar

DOI: https://doi.org/10.1016/j.jcrysgro.2010.04.005

IF: 1.8

2010-01-01

Journal of Crystal Growth

Abstract:We have obtained high-quality, crack-free AlN wafers using a convex thermal field inside the growth chamber. Free-standing AlN boules of 15mm in height and 15mm in diameter were grown. The carbon concentration was found to be similar in all parts of the boule (∼8×1018cm−3) while the initial O concentration was higher (∼1×1019cm−3) and slightly decreased during growth. It was found that O incorporated differently on different crystallographic faces. High resolution XRD showed a continuous improvement in crystal quality as a function of boule length. The full width at half maximum (FWHM) of the double crystal rocking curves decreased from 78in at the beginning of growth to 13in at the growth end. To the best of our knowledge, this is the first report on impurity incorporation on different crystallographic facets obtained from the same boule.
Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Shengtao Zhang,Guofeng Fan,Tie Li,Lili Zhao

DOI: https://doi.org/10.1039/d2ra02875a

IF: 4.036

2022-07-09

RSC Advances

Abstract:The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical fields in the growth process were modeled and studied with the help of the numerical simulation software Virtual Reactor, and its accuracy was verified by the agreement between morphology of the experimental crystal and the simulation. Additionally, the effects of thermal insulation adjustment of crystal growth thermal fields, application of seed crystals with different diameters, and shelter structure on the crystal growth process were also studied. By optimizing the crystal growth conditions, a nearly flat and slightly convex crystal growth interface was obtained successfully in our lab. Crystal quality was significantly improved, and a 6-inch SiC crystal with single polytype, high quality and low defects was successfully prepared.

chemistry, multidisciplinary
Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

X. Jiang,K. Schiffmann,C.-P. Klages,D. Wittorf,C. L. Jia,K. Urban,W. Jäger

DOI: https://doi.org/10.1063/1.367012

IF: 2.877

1998-03-01

Journal of Applied Physics

Abstract:Heteroepitaxial [001]-oriented diamond films with considerably increased lateral grain size and strongly improved orientational perfection could be prepared by microwave plasma-assisted chemical vapor deposition using a [001]-textured growth process on Si (001) substrates followed by a [110] step-flow growth process. The diamond films were characterized by atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The results indicate that the diamond crystals increase their lateral dimensions at the (001) film surface either by coalescence of grains combined with a termination of the propagation of grain boundaries or by changing the grain boundary plane orientations from preferentially vertical to preferentially parallel directions with respect to the (001) growth faces. In the second case, the grains with relatively large angle deviation from the ideal epitaxial orientation are overgrown by those with relatively small angle deviation. As a result, the degree of orientational perfection of the films improves considerably in comparison to that of films prepared by the established process of [001]-textured growth. The presence of boron in the gas phase was found to strongly enhance the step-flow lateral grain growth. It was possible to achieve deposition of a thin boron-doped diamond film characterized by a full width at half maximum value of the measured tilt angle distribution of only 2.1°.

physics, applied
High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Shengyuan Dong,Yanhui Xing,Xuguang Deng,Chunhong Zeng,Chengcheng Zhi,Jiaming Weng,Wenbo Tang,Binghui Wang,Jiahao Li,Tong Liu,Jun Han,Baoshun Zhang,Zhongming Zeng

DOI: https://doi.org/10.1021/acs.cgd.3c00146

IF: 4.01

2023-05-31

Crystal Growth & Design

Abstract:The growth of high-quality AlN films has always been the focus of research. Combined with NH3 in situ pretreatment before growth, with optimized growth conditions, we demonstrated a periodic growth method, which alternates between three-dimensional (3D) growth mode and two-dimensional (2D) growth mode, to grow a thick crack-free AlN film with good crystal quality on the on-axis 4H-SiC substrate by metal–organic chemical vapor deposition (MOCVD). X-ray rocking curves (XRCs) indicated that full width at half-maximum (FWHM) of the (0002) and (10–12) reflections were 241.3″ and 474.4″, respectively. The film thickness was over 1.4 μm. Lattice constant and residual stress results showed residual compressive stress in the sample. The periodic two-step growth and substrate pretreatment both play an important role in controlling the residual stress of films to avoid cracking. This work can serve as an important reference for growing high-quality crack-free AlN on SiC.

chemistry, multidisciplinary,materials science,crystallography
Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Naifu Zhang,Yue Gao,Ruzhong Zhu,Rong Wang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1016/j.jcrysgro.2022.126915

IF: 1.8

2022-12-15

Journal of Crystal Growth

Abstract:Increasing the diameter and reducing the dislocation density of 4H silicon carbide (4H-SiC) single crystals are the development tendency of 4H-SiC single-crystal substrate to reduce the cost of 4H-SiC based devices. In this work, we use the growth of a 100 mm 4H-SiC single crystal as an example to demonstrate that the tiling approach is attractive to enlarge the diameter of physical-vapor-transport (PVT)-grown 4H-SiC single crystals by a single growth period. By titling four pieces of 4H-SiC seed crystals, a 100 mm 4H-SiC boule without crystal deterioration is obtained by the PVT growth method. The shape of the growth interface is convex and complete after the PVT growth, indicating the tiling gaps between neighboring seed-crystal pieces are healed after the PVT growth of 25-mm thick 4H-SiC. Wafers are obtained after sequential slicing, lapping, and chemical mechanical polishing (CMP). The high-resolution X-ray diffraction (HRXRD) rocking curve measurements of the wafer at the latest growth stage indicate that the 4H-SiC crystal is basically healed, with mesoscopic boundaries being created at the central area of the wafer. Raman spectra indicate that the healing polymorph across the tiling gaps is 4H-SiC. We find that threading edge dislocations (TEDs) dominate the dislocation types in the 4H-SiC substrate wafers at the initial, middle, and latest growth stages. As the PVT growth proceeds, the density of dislocations in 4H-SiC wafers significantly decreases, as a result of the crystalline healing. Our work opens a pathway to enlarge the size of 4H-SiC single crystals in a single PVT growth period, which paves the way for the high-efficiency growth of large-size 4H-SiC single-crystals.

materials science, multidisciplinary,physics, applied,crystallography

Realizing Overgrowth in the Homo-Pvt Process for 2 Inch AlN Single Crystals

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method

Surface Control of AlN Single Crystal Growth on SiC Substrate

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Heterogeneous Growth of Single Crystals on Polycrystals

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

Seeded Growth of AlN on N- and Al-polar AlN Seeds by Physical Vapor Transport

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Growth of Aln Single Crystalline Boules

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method