Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.

MONTE CARLO MODEL FOR ELECTRON TRANSPORT IN THE MATERIAL 3C-Sic

Monte Carlo study of electron transport in SiC

Monte Carlo Simulation of Electron Transport in Silicon Carbide

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Electronic Transport in the Silicon Carbide Semiconductor in Phase 3C

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

The effect of temperature and cascade collision on thermal conductivity of 3C-SiC: A molecular dynamics study

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Magnon Transport and Thermal Properties of Confined Anisotropic CrI3

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Monte Carlo Simulation of Tunneling Magnetoresistance in Nanostructured Materials

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to Device

Free electron density and mobility in high-quality 4H–SiC

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Monte Carlo simulation of Cu-resistivity