Abstract:Copper (Cu) is used in integrated circuits and microdevices and has the potential to replace aluminum alloys due to its low resistivity, strong electromigration properties, and affordability. However, a significant factor that influences the performance of devices at the micro and nano scales is the surface roughness of the deposits. LAMMPS software is employed to simulate the deposition Cu on an ideal state for a stainless-steel substrate. The deposition process and deformation behavior of Cu on the surface and the roughness of the deposition surface is analyzed. Taking the deposition process of Cu atoms as an object, the effects of different atomic numbers, different temperatures, different velocities, and different heights on the surface roughness of the deposits were investigated. The atomic structure composition of the deposition velocity is analyzed, and the radial distribution function is analyzed to reveal the microscopic mechanism of action. The results of the theoretical deposition and analysis show that the surface roughness increases with the number of atoms deposited and decreases with increasing substrate temperature. The surface roughness first decreases and then, after some fluctuation, stays constant at a particular level with increasing velocity. Additionally, as the deposition height increases, the surface roughness reduces. There is a nonlinear relationship between the various components and the deposited surface roughness. The surface quality of deposits can be improved during the deposition process by optimizing the deposition parameters of deposition atoms, substrate temperature, deposition velocity, and deposition height.

Monte Carlo simulation of Cu-resistivity

Monte carlo simulation of cu-resistivity considering size-effects

Modeling and Characterization of Cu-Graphene Heterogeneous Interconnects

Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Electrical Resistivity Calculations for Copper Nanointerconnect

Simulation of Three Dimensional Grain Growth for Cu-interconnects

Monte-carlo modeling for grain growth process in Vapor-Liquid-Solid phase sintered materials

A Simulation Study of the Depositing Process and Electrical Properties of Copper-doped Carbon Film

Monte Carlo Simulation of Tunneling Magnetoresistance in Nanostructured Materials

An investigation of the combined size and rate effects on the mechanical responses of FCC metals

Mechanisms of Scaling Effect for Emerging Nanoscale Interconnect Materials

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Surface Roughness Analysis of Cu Films Deposited on Si Substrates: A Molecular Dynamic Analysis

Simulating the Random Dopant Effect: A New Three- Dimensional Monte Carlo Approach

Multiscale Simulation of Thermal Contact Resistance Based on the Gaussian Surfaces

Computational Simulation of He Bubble Evolution in Fcc Cu with Σ3 Twin Boundary Using Object Kinetic Monte Carlo Method

Electron Transport from Quantum Kinetic Monte Carlo Simulations

Molecular dynamics simulations and analyzation of Cu deposited on stainless steel substrate surfaces

Multiscale Micromorphic Model For The Plastic Response Of Cu Thin Film

Application of Computer: Monte Carlo Simulation of Thin Film Growth