A Simulation Study of the Depositing Process and Electrical Properties of Copper-doped Carbon Film

Qihang GUO,Jinyu ZHANG
DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.05.004
2013-01-01
Abstract:The depositing process of copper-doped carbon (CuC) film is simulated using Monte Carlo method. The CuC film is modeled by a space grid structure. The depositing process of CuC is simulated by randomly distributing on a spatial grid structure. The electrical properties are calculated by solving Poisson's equation. Results indicate that the surface roughness decreases progressively as the carbon content in the films increases, and that the electrical resistivity of CuC films containing 20%~25% of carbon is very low whereas the resistivity value can be very high with 60%~75% of carbon content. All the simulations are compared with experimentally measured data, and the good agreement between them validates the accuracy of the simulations.
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