Process Optimization of Optical Lithography of SU-8 Photoresist

Zhang Ye,Chen Di,Zhang Jinya,Zhu Jun,Liu Jingquan
DOI: https://doi.org/10.3321/j.issn:1004-132x.2005.z1.157
2005-01-01
Abstract:Process parameters of SU-8 photoresist based UV-LIGA technique were optimized.The influences of expose time and the wavelength of expose source(on the resist formation) were investigated.The line width of photoresist surface first decreased then increased with expose time.It has a minimum.The sidewall angle first increased then decreased with expose time.It has a maximum.We have optimized the process parameters like wavelength of expose source,expose time and developing time to fabricate 300 μm-thickness microstructures with sidewall angle of 90.64° and those of 500 μm-thickness with sidewall of 89.98°.
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