Nonvolatile Switching in In2Se3-silicon Microring Resonators

Tiantian Li,Yong Wang,Huadan Xing,Qiu Li,Feifan Wang,Anishkumar Soman,Stephanie Law,Tingyi Gu

DOI: https://doi.org/10.1364/cleo_si.2021.sm4b.5

2021-01-01

Abstract:We investigate the phase transition in molecular beam epitaxy grown crystalline In2Se3 and observed nonvolatile switching in hybrid integrated silicon photonic resonator.

What problem does this paper attempt to address?

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Jian Qi Shen,Jing Gu

DOI: https://doi.org/10.7566/jpsj.87.044401

2018-01-01

Journal of the Physical Society of Japan

Abstract:Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level.-configuration model {vertical bar 0 >, vertical bar 1 >, vertical bar 2 >}, i.e., the ground state of the molecule is the lower level vertical bar 0 > and the highly degenerate electronic states in the two quantum dots are the two upper levels vertical bar 1 >, vertical bar 2 >. The electromagnetic characteristics due to the vertical bar 0 >-vertical bar 1 > transition can be controllably manipulated by a tunable gate voltage (control field) that drives the vertical bar 2 >-vertical bar 1 > transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., vertical bar 0 >-vertical bar 1 > two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.
Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Jianghong Wu,Yuting Ye,Jialing Jian,Xiaoping Yao,Junying Li,Bo Tang,Hui Ma,Maoliang Wei,Wenbin Li,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acs.nanolett.3c01247

IF: 10.8

2023-01-01

Nano Letters

Abstract:Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.
Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Tiantian Li,Yong Wang,Wei Li,Dun Mao,Chris J. Benmore,Igor Evangelista,Huadan Xing,Qiu Li,Feifan Wang,Ganesh Sivaraman,Anderson Janotti,Stephanie Law,Tingyi Gu

DOI: https://doi.org/10.1002/adma.202108261

IF: 29.4

2022-04-18

Advanced Materials

Abstract:The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In2 Se3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer "shear glide" and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline-crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. The nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In2 Se3 -covered layer, resulted from the combinations of material absorption and scattering.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Changping Zhang,Maoliang Wei,Jun Zheng,Shujun Liu,Hongyuan Cao,Yishu Huang,Ying Tan,Ming Zhang,Yiwei Xie,Zejie Yu,Junying Li,Hui Ye,Lan Li,Hongtao Lin,Huan Li,Yaocheng Shi,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1002/adom.202202748

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Reconfigurable silicon photonic devices are widely used in numerous emerging fields such as optical interconnects, photonic neural networks, quantum computing, and microwave photonics. Currently, phase change materials (PCMs) have been extensively investigated as promising candidates for building switching units due to their strong refractive index modulation. Here, nonvolatile multilevel switching of silicon photonic devices with Ge2Sb2Te5 (GST) is demonstrated with In2O3 transparent microheaters that are compatible with diverse material platforms. With GST integrated on the silicon photonic waveguides and Mach-Zehnder interferometers (MZIs), repeatable and reversible multilevel modulation of GST is achieved by electro-thermally induced phase transitions. Particularly, the segmented switching unit of In2O3 and GST is proposed and demonstrated to be capable of producing about one order of magnitude larger temperature gradient than that of the nonsegmented unit, resulting in up to 64 distinguishable switching levels of 6-bit precision, and fine-tuning of the switching voltage pulses is promising to push the precision even further, to 7-bit, or 128 distinguishable switching levels. The capability of precise multilevel phase-change modulation is crucial to further facilitate the development of nonvolatile reconfigurable switches and variable attenuation devices as building blocks in large-scale programmable optoelectronic systems.
Energy-efficient nonvolatile switching of silicon microring resonator with suspended phase-change waveguide

Shangtong Han,Ruiqing He,Changping Zhang,Huan Li,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1109/OECC56963.2023.10209905

2023-01-01

Abstract:We have proposed and designed a partially suspended silicon microring resonator (MRR) to improve the energy efficiency for inducing phase change of $\mathrm{S}\mathrm{b}_{2}\mathrm{S}\mathrm{e}3$. Only 10. $\mathrm{S}\mathrm{n}\mathrm{J}$ is required to amorphize the $\mathrm{S}\mathrm{b}_{2}\mathrm{S}\mathrm{e}3$, about half of that for a nonsuspended MRR.
Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Kun Shang,Lei Niu,Huimin Jin,Haoxian Wang,Wei Zhang,Fuwan Gan,Peipeng Xu

DOI: https://doi.org/10.1364/OL.511301

2024-02-01

Abstract:We propose a non-volatile 2 × 2 photonic switch based on multimode interference in an Sb2Se3-loaded waveguide. The different modal symmetries of the TE0 and TE1 modes supported in the multimode region change their propagation constants distinctly upon the Sb2Se3 phase transition. Through careful optical design and FDTD optimization of the multimode waveguide dimensions, efficient switching is achieved despite the modest index contrast of Sb2Se3 relative to Ge2Sb2Te5. The fabricated optical switch demonstrates favorable characteristics, including low insertion loss of ∼1 dB, a compact length of ∼27 µm, and small cross talk below -15 dB across a 35 nm bandwidth. Such non-volatile and broadband components will be critical for future high-density programmable photonic-integrated circuits for optical communications and signal processing.
Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Changping Zhang,Maoliang Wei,Jun Zheng,Shujun Liu,Hongyuan Cao,Yishu Huang,Ying Tan,Ming Zhang,Yiwei Xie,Zejie Yu,Junying Li,Hui Ye,Lan Li,Hongtao Lin,Huan Li,Yaocheng Shi,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1002/adom.202202748

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Reconfigurable silicon photonic devices are widely used in numerous emerging fields such as optical interconnects, photonic neural networks, quantum computing, and microwave photonics. Currently, phase change materials (PCMs) have been extensively investigated as promising candidates for building switching units due to their strong refractive index modulation. Here, nonvolatile multilevel switching of silicon photonic devices with Ge2Sb2Te5 (GST) is demonstrated with In2O3 transparent microheaters that are compatible with diverse material platforms. With GST integrated on the silicon photonic waveguides and Mach-Zehnder interferometers (MZIs), repeatable and reversible multilevel modulation of GST is achieved by electro-thermally induced phase transitions. Particularly, the segmented switching unit of In2O3 and GST is proposed and demonstrated to be capable of producing about one order of magnitude larger temperature gradient than that of the nonsegmented unit, resulting in up to 64 distinguishable switching levels of 6-bit precision, and fine-tuning of the switching voltage pulses is promising to push the precision even further, to 7-bit, or 128 distinguishable switching levels. The capability of precise multilevel phase-change modulation is crucial to further facilitate the development of nonvolatile reconfigurable switches and variable attenuation devices as building blocks in large-scale programmable optoelectronic systems.
Experimental Demonstration of a Flexible-Grid 1×2 Wavelength-Selective Switch Based on Silicon Microring Resonators.

Weiwei Chen,Hao Lu,Shiqi Li,Pengjun Wang,Shixun Dai,Tianjun Yang,Bohao Zhang,Ruolan Yu,Qiang Fu,Jun Li,Yan Li,Tingge Dai,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.44.000403

IF: 3.6

2019-01-01

Optics Letters

Abstract:An integrated flexible-grid 1 x 2 wavelength-selective switch based on reconfigurable add-drop silicon microring resonators using strip waveguides is designed and experimentally demonstrated. By flexibly tuning the resonance of microring resonators and path phase differences via the thermooptic effect, the transmission spectra with adjustable bandwidths can be formed as desired at the output ports. Our experimental results reveal that the fabricated flexiblegrid 1 x 2 wavelength-selective switch provides crosstalk lower than -1039 dB. The 3-dB bandwidth varies from 0.38 nm to 1 nm, the in-band ripple is less than 0.52 dB, and the response time is about 17.6 mu s. (C) 2019 Optical Society of America
Non-volatile 2?×?2 optical switch using multimode interference in an Sb_2Se_3-loaded waveguide

Kun Shang,Lei Niu,Huimin Jin,Haoxian Wang,Wei Zhang,Fuwan Gan,Peipeng Xu

DOI: https://doi.org/10.1364/ol.511301

IF: 3.6

2024-01-31

Optics Letters

Abstract:Kun Shang, Lei Niu, Huimin Jin, Haoxian Wang, Wei Zhang, Fuwan Gan, Peipeng Xu We propose a non-volatile 2?×?2 photonic switch based on multimode interference in an Sb_2Se_3-loaded waveguide. The different modal ... [Opt. Lett. 49, 722-725 (2024)]

optics
Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Wanjun Wang,Yong Zhao,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/acpc.2012.as3b.4

2012-01-01

Abstract:In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch.
Photo-Induced Thermo-Optical Refraction Switching by a Graphene-Assisted Silicon Microring Resonator

Zhen-Wei Li,Qiang Liu,Hong Wang,Meng Deng,Qing-Zhong Huang,Yi Wang

DOI: https://doi.org/10.1109/jlt.2021.3065686

IF: 4.7

2021-06-01

Journal of Lightwave Technology

Abstract:Zhen-Wei Li, Qiang Liu, Hong Wang, Meng Deng, Qing-Zhong Huang, Yi Wang We demonstrate the in-plane photo-induced thermo-optical refraction switching using a silicon all-pass microring resonator (APMRR) assisted ... [J. Lightwave Technol. 39, 3471-3477 (2021)]

engineering, electrical & electronic,optics,telecommunications
Controlling the Extinction Ratio of Microring Resonators by Perovskite Nonlinearity

Feifan Wang,Lianfeng Zhao,Hwaseob Lee,Yahui Xiao,Tiantian Li,Yixiu Wang,Anishkumar Soman,Thomas Kananen,Xiaoyong Hu,Barry P. Rand,Tingyi Gu

DOI: https://doi.org/10.1364/cleo_at.2021.jw1a.47

2021-01-01

Abstract:We demonstrate a low power all-optical switch in hybrid silicon resonator at room temperature, utilizing exceptionally high nonlinearity in solution integrated perovskite. (c) 2021 The Author(s)
Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform

Richard Soref,Francesco De Leonardis,Martino De Carlo,Vittorio M. N. Passaro

2024-01-29

Abstract:This theoretical modeling and simulation paper presents designs and projected performances of two non-volatile, broadband, on-chip 2-by-2 electro-optical switches based upon the germanium-on-insulator (GeOI) photonic-electronic platform operating at the 2.5 $\mu$m mid-infrared wavelength. These compact devices facilitate large-scale integration on a monolithic wafer where all components are made of group-IV semiconductors. The switches are the two-waveguide directional coupler (DC) and the Mach-Zehnder interferometer (MZI). A thin-film graphene Joule-effect micro-heater is assumed on the planarized GeOI device to change the phase (reversably) of DC-slot-embedded Sb$_2$Se$_3$ phase-change material (PCM) from crystalline to amorphous. The MZI has this PCM within its slotted-arm waveguides. Simulations show high-performance bistable or multi-stable cross-bar switching in both devices. The 2-by-2 DC has an active coupling length of 17 $\mu$m, 130 nm gap, and a footprint of 5 $\mu$m -by- 31 $\mu$m. The device bandwidth is 30 nm over a wavelength range where cross and bar insertion losses IL are less than 0.3 dB, and where optical crosstalk is less than -15 dB. Results for the 2-by-2 MZI show crossbar switching attained with a 7.8 $\mu$m-length Sb$_2$Se$_3$ slot and a 5 $\mu$m -by- 51 $\mu$m switch footprint. Stable, multi-level switching in both devices is attained via partial amorphization. Thermal modeling shows that careful control of the voltage-pulse amplitude V applied to graphene (rectangular pulse duration of 500 ns) can give 32 levels, for example, using V in the range from 6.18 to 7.75 Volts.

Optics,Applied Physics
Optical Bistability in a Silicon Nitride Microring Integrated with 2D PtSe2 [Invited]

Jiaqi Wang,Yingqi Xu,Zhijian Mao,Guoxian Wu,Rongxiang Guo,Xu Li,Yu Du,Youfu Geng,Xuejin Li,Hon Ki Tsang,Zhenzhou Cheng

DOI: https://doi.org/10.3788/col202422.091301

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:Optical bistability can be used to explore key components of all-optical information processing systems, such as optical switches and optical random memories. The hybrid integration of emerged two-dimensional layered PtSe2 with waveguides is promising for the applications. We demonstrated the optical bistability in the PtSe2-on-silicon nitride microring resonator induced by a thermo-optic effect. The fabricated device has a resonance-increasing rate of 6.8 pm/mW with increasing optical power. We also established a theoretical model to explain the observation and analyze the device's performance. The study is expected to provide a new scheme for realizing all-optical logic devices in next-generation information processing systems.
Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

Carlos Ríos,Yifei Zhang,Mikhail Shalaginov,Skylar Deckoff-Jones,Haozhe Wang,Sensong An,Hualiang Zhang,Myungkoo Kang,Kathleen A. Richardson,Christopher Roberts,Jeffrey B. Chou,Vladimir Liberman,Steven A. Vitale,Jing Kong,Tian Gu,Juejun Hu

DOI: https://doi.org/10.48550/arXiv.2007.07944

2020-07-16

Abstract:Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real-world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant supply of power and significant form factors. Essential aspects to overcoming these issues are the development of nonvolatile optical reconfiguration techniques which are compatible with on-chip integration with different photonic platforms and do not disrupt their optical performances. In this paper, a solution is demonstrated using an optoelectronic framework for nonvolatile tunable photonics that employs undoped-graphene microheaters to thermally and reversibly switch the optical phase-change material Ge$_2$Sb$_2$Se$_4$Te$_1$ (GSST). An in-situ Raman spectroscopy method is utilized to demonstrate, in real-time, reversible switching between four different levels of crystallinity. Moreover, a 3D computational model is developed to precisely interpret the switching characteristics, and to quantify the impact of current saturation on power dissipation, thermal diffusion, and switching speed. This model is used to inform the design of nonvolatile active photonic devices; namely, broadband Si$_3$N$_4$ integrated photonic circuits with small form-factor modulators and reconfigurable metasurfaces displaying 2$\pi$ phase coverage through neural-network-designed GSST meta-atoms. This framework will enable scalable, low-loss nonvolatile applications across a diverse range of photonics platforms.

Applied Physics,Optics
A Study on Optical Properties of Sb2Se3 Thin Films and Resistive Switching Behavior in Ag/Sb2Se3/W Heterojunctions

Chunmin Liu,Yafei Yuan,Ling Cheng,Jing Su,Xingtong Zhang,Xiangxiang Li,Hao Zhang,Min Xu,Jing Li

DOI: https://doi.org/10.1016/j.rinp.2019.102228

IF: 4.565

2019-01-01

Results in Physics

Abstract:In this study, optical phase change property and bipolar memristive switching behavior were systematically characterized in Sb2Se3 thin films with different annealing temperatures and Ag/Sb2Se3/W heterojunction, respectively. The structural investigations reveal that the crystallinity of Sb2Se3 sample improves with increasing annealing temperature. Anomalous changes of both structure and optical properties are attributed to the increase of defect states at an excessively high annealing temperature. Additionally, the absorption edge shift towards longer wavelength after thermal treatment, indicating a decrease in the optical band gap. In the aspect of electrical characteristics, the Ag/Sb2Se3/W cell has a bipolar memristive switching behavior and shows reversible switching property. The study based on the optical properties and memristive switching behaviors of Sb2Se3 thin films offers an important understanding to the applications of Sb2Se3 and other chalcogenide semiconductor as promising materials for integrated optical system and chalcogenide-based memory devices.
Silicon Electro-Optic Switches using Microring Resonators with Phase-Tunable Feedback

Linjie Zhou,Poon, A.W.

DOI: https://doi.org/10.1109/GROUP4.2006.1708227

2006-01-01

Abstract:We report a silicon electro-optic switch using a microring resonator with phase-tunable feedback. We show a wide mode spacing of four-times the ring free-spectral range. The carrier-induced blue-shifted resonance maintains a high extinction ratio
Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Xiaodong Zheng,Wei Han,Ke Yang,Lok Wing Wong,Chi Shing Tsang,Ka Hei Lai,Fangyuan Zheng,Tiefeng Yang,Shu Ping Lau,Thuc Hue Ly,Ming Yang,Jiong Zhao

DOI: https://doi.org/10.1126/sciadv.abo0773

IF: 13.6

2022-01-01

Science Advances

Abstract:Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In 2 Se 3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In 2 Se 3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In 2 Se 3 . We achieve reversible AFE and out-of-plane FE phase transition in 2D In 2 Se 3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In 2 Se 3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.
Resonant Multilevel Optical Switching with Phase Change Material GST

Di Wu,Xing Yang,Ningning Wang,Liangjun Lu,Jianping Chen,Linjie Zhou,B. M. Azizur Rahman

DOI: https://doi.org/10.1515/nanoph-2022-0276

2022-01-01

Abstract:We demonstrate a multilevel optical memristive switch based on a silicon Fabry-Perot resonator. The resonator is constructed by a pair of waveguide Bragg gratings at the ends of a multimode interferometer (MMI) covered with sub-micrometer-size Ge2Sb2Te5 (GST) thin film on top. The interaction between the optical field and GST is greatly enhanced due to the resonant effect. The GST phase transition is triggered by applying electrical pulses to the doped-silicon microheater. Light is transmitted when GST is amorphous while it is highly absorbed by the crystalline GST at the resonance wavelength, leading to a higher on-off extinction ratio (ER) compared to the non-resonant device. The resonant device achieves a maximum transmission contrast of 10.29 dB and a total of 38 distinct nonvolatile switching levels. Our work provides an effective solution to improving the multilevel switching performance of phase-change devices and paves the way for future nonvolatile silicon photonics devices.
Versatile photonic molecule switch in multimode microresonators

Zihan Tao,Bitao Shen,Wencan Li,Luwen Xing,Haoyu Wang,Yichen Wu,Yuansheng Tao,Yan Zhou,Yandong He,Chao Peng,Haowen Shu,Xingjun Wang

DOI: https://doi.org/10.1038/s41377-024-01399-0

2024-02-20

Abstract:Abstract Harnessing optical supermode interaction to construct artificial photonic molecules has uncovered a series of fundamental optical phenomena analogous to atomic physics. Previously, the distinct energy levels and interactions in such two-level systems were provided by coupled microresonators. The reconfigurability is limited, as they often require delicate external field stimuli or mechanically altering the geometric factors. These highly specific approaches also limit potential applications. Here, we propose a versatile on-chip photonic molecule in a multimode microring, utilizing a flexible regulation methodology to dynamically control the existence and interaction strength of spatial modes. The transition between single/multi-mode states enables the “switched-off/on” functionality of the photonic molecule, supporting wider generalized applications scenarios. In particular, “switched-on” state shows flexible and multidimensional mode splitting control in aspects of both coupling strength and phase difference, equivalent to the a.c. and d.c. Stark effect. “Switched-off” state allows for perfect low-loss single-mode transition (Q i ~ 10 million) under an ultra-compact bend size (FSR ~ 115 GHz) in a foundry-based silicon microring. It breaks the stereotyped image of the FSR-Q factor trade-off, enabling ultra-wideband and high-resolution millimeter-wave photonic operations. Our demonstration provides a flexible and portable solution for the integrated photonic molecule system, extending its research scope from fundamental physics to real-world applications such as nonlinear optical signal processing and sixth-generation wireless communication.

optics

Nonvolatile Switching in In2Se3-silicon Microring Resonators

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Energy-efficient nonvolatile switching of silicon microring resonator with suspended phase-change waveguide

Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Experimental Demonstration of a Flexible-Grid 1×2 Wavelength-Selective Switch Based on Silicon Microring Resonators.

Non-volatile 2?×?2 optical switch using multimode interference in an Sb_2Se_3-loaded waveguide

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Photo-Induced Thermo-Optical Refraction Switching by a Graphene-Assisted Silicon Microring Resonator

Controlling the Extinction Ratio of Microring Resonators by Perovskite Nonlinearity

Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform

Optical Bistability in a Silicon Nitride Microring Integrated with 2D PtSe2 [Invited]

Multi-level Electro-thermal Switching of Optical Phase-Change Materials Using Graphene

A Study on Optical Properties of Sb2Se3 Thin Films and Resistive Switching Behavior in Ag/Sb2Se3/W Heterojunctions

Silicon Electro-Optic Switches using Microring Resonators with Phase-Tunable Feedback

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Resonant Multilevel Optical Switching with Phase Change Material GST

Versatile photonic molecule switch in multimode microresonators