Abstract:Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level.-configuration model {vertical bar 0 >, vertical bar 1 >, vertical bar 2 >}, i.e., the ground state of the molecule is the lower level vertical bar 0 > and the highly degenerate electronic states in the two quantum dots are the two upper levels vertical bar 1 >, vertical bar 2 >. The electromagnetic characteristics due to the vertical bar 0 >-vertical bar 1 > transition can be controllably manipulated by a tunable gate voltage (control field) that drives the vertical bar 2 >-vertical bar 1 > transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., vertical bar 0 >-vertical bar 1 > two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

Optical Bistability in a Silicon Nitride Microring Integrated with 2D PtSe2 [Invited]

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Realizing topological edge states in a silicon nitride microring-based photonic integrated circuit.

Optical bistability on a silicon chip

Optical Bistability in a Tunable Gourd-Shaped Silicon Ring Resonator

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Nonlinear optical bistability in microring resonators for enhanced phase sensing

Analytical study of optical bistability in silicon-waveguide resonators

Optical Bistability in Semiconductor Periodic Structures

Optical Bistability in Nanosilicon with Record Low Q -Factor

All-optical Bistable Switching and Signal Regeneration in a Semiconductor Layered Distributed-Feedback/fabry–perot Structure

Molecular-absorption-induced thermal bistability in PECVD silicon nitride microring resonators

Ultralow Switching Threshold Optical Bistable Devices based on Epsilon-near-zero Ga 2 O 3 -SiC-Ag Multilayer Structures

Optical Properties of SAW-Driven Optomechanical Nanostructure

Optical Bistability and Multistability in Hybrid System

Broadband and Ultra-Low Threshold Optical Bistability in Guided-Mode Resonance Grating Nanostructures of Quasi-Bound States in the Continuum

Optical bistability in a heterodimer composed of a quantum dot and a metallic nanoshell

Thermo-optical bistability enabled by bound states in the continuum in silicon metasurfaces

Optical bistability in periodically poled LiNbO3 induced by cascaded second-order non-linearity and the electro-optic effect

High-contrast Optical Bistability Using a Subwavelength Epsilon-Near-zero Material.