CVD controlled growth of large-scale WS2 monolayers

Zhuhua Xu,Yanfei Lv,Jingzhou Li,Feng Huang,Pengbo Nie,Siwei Zhang,Shichao Zhao,Shixi Zhao,Guodan Wei

DOI: https://doi.org/10.1039/c9ra06219j

IF: 4.036

2019-01-01

RSC Advances

Abstract:Monolayer tungsten disulfide (WS2) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics.

What problem does this paper attempt to address?

CVD Controlled Growth of Large-Scale WS2 Monolayers

Zhuhua Xu,Yanfei Lv,Jingzhou Li,Feng Huang,Pengbo Nie,Siwei Zhang,Shichao Zhao,Shixi Zhao,Guodan Wei

DOI: https://doi.org/10.1039/c9ra06219j

IF: 4.036

2019-01-01

RSC Advances

Abstract:Monolayer tungsten disulfide (WS2) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS2. In this paper, we report the chemical vapor deposition (CVD) growth behavior of hexagonal WS2 monolayers by using WS2 powders and sodium triosulfate (Na2S2O3) as precursors. We observed the Na2S2O3 has a significant effect on the WS2 triangular and leaf-like shapes. In addition, based on proposed S-termination and W-termination theory, the growth mechanisms for different shapes of WS2 were discussed.
Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Shengxue Zhou,Lina Liu,Shuang Cui,Xiaofan Ping,Dake Hu,Liying Jiao

DOI: https://doi.org/10.1007/s12274-020-2859-9

IF: 9.9

2020-06-09

Nano Research

Abstract:Two-dimensional (2D) tungsten disulfide (WS2) has emerged as a promising ultrathin semiconductor for building high-performance nanoelectronic devices. The controllable synthesis of WS2 monolayers (1L) with both large size and high quality remains as a challenge. Here, we developed a new approach for the chemical vapor deposition (CVD) growth of WS2 monolayers by using K2WS4 as the growth precursor. The simple chemistry involved in our approach allowed for improved controllability and a fast growth rate of 30 μm·min−1. We achieved the reliable growth of 1L WS2 flakes with side lengths of up to 500 μm and the obtained WS2 flakes were 2D single crystals with low density of defects over a large area as evidenced by various spectroscopic and microscopic characterizations. In addition, the large 1L WS2 single crystals we obtained showed higher electrical performance than their counterparts grown with previous approaches, demonstrating the potential of our approach in producing high quality and large 2D semiconductors for future nanoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
ZnO-Controlled Growth of Monolayer WS2 Through Chemical Vapor Deposition

Zhuhua Xu,Yanfei Lv,Feng Huang,Cong Zhao,Shichao Zhao,Guodan Wei

DOI: https://doi.org/10.3390/ma12121883

IF: 3.4

2019-01-01

Materials

Abstract:Monolayer tungsten disulfide (2D WS2) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS2 is still challenging. In this paper, we report a novel method to grow WS2 through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS2 reacts with ZnO to form ZnWO4 by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS2, selectively positioned on the silicon oxide substrate after the CVD growth.
Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Changyong Lan,Rui Zhang,Haolun Wu,Shaofeng Wen,Ruisen Zou,Xiaolin Kang,Chun Li,Johnny C. Ho,Yi Yin,Yong Liu

DOI: https://doi.org/10.1016/j.apmt.2021.101234

IF: 8.663

2021-12-01

Applied Materials Today

Abstract:The emerging of graphene has stimulated the exploration of two-dimensional (2D) nanomaterials. As a kind of important semiconducting 2D materials, WS2 shows great potentials in electronics, optoelectronics, and photonics, etc.; however, the synthesis of high quality, large area, uniform and epitaxial 2D WS2 monolayer films is still a challenge. Herein, we report the epitaxial growth of WS2 on sapphire with excellent electrical and optoelectronic properties via an enhanced chemical vapor deposition method. With the assistance of Na2WO4 as well as the investigation of related growth mechanism, large single crystal triangular WS2 monolayer flakes with well-defined orientations are achieved. The corresponding single crystal domain size is larger than 1 mm together with the centimeter-scale continuous film realized. Once fabricated into transistors, the monolayers exhibit excellent device properties, such as high mobility and large on/off current ratio. Also, these devices give respectable photoresponse properties when operated in the photoconductive mode. The peak responsivity can reach 4.6 A W−1. All these results demonstrate the high quality of as-synthesized WS2 monolayers, indicating the bright future of this synthesis technology for 2D materials towards practical applications.

materials science, multidisciplinary
Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Jieyuan Liang,Zixing Zou,Junwu Liang,Di Wang,Biao Wang,Anshi Chu,Jiali Yi,Cheng Zhang,Lizhen Fang,Tian Zhang,Huawei Liu,Xiaoli Zhu,Dong Li,Anlian Pan

DOI: https://doi.org/10.1007/s11432-023-3941-4

2024-04-27

Science China Information Sciences

Abstract:Bilayer transition metal dichalcogenides (TMDs) balance the high mobility of single layers with the high state density of multilayers and therefore have promising application prospects in high-performance electronics. However, the layer-controlled growth of 2D materials is still confronted with challenges such as poor repeatability between different labs and a limited understanding of the growth mechanism at the atomic scale. Herein, we report a new carbon-assisted chemical vapor deposition process that can realize the growth of WS 2 sheets with high yield, precise thickness controllability, and repeatability. We show that carbon can act as a reducing agent and catalyst that preferentially reacts with the WO 3 precursor to form intermediate WO 3− x products with low-valence state W. The resulting oxycarbide gas has a low surface adsorption energy when deposited on the surface of as-grown WS 2 , which provides nucleation sites for the subsequent layer of WS 2 growth and leads to the vertical growth of WS 2 sheets. The growth mechanism is thoroughly investigated. Electrical transport measurements show that the produced bilayer WS 2 possesses a high carrier mobility (up to 58 cm 2 ·V −1 ·s −1 ) and small subthreshold swing (estimated to be 148 mV/decade), which are among the best reported results for TMDs produced using CVD.

computer science, information systems,engineering, electrical & electronic
Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Jiajun Chen,Kai Shao,Weihuang Yang,Weiqing Tang,Jiangpeng Zhou,Qinming He,Yaping Wu,Chunmiao Zhang,Xu Li,Xu Yang,Zhiming Wu,Junyong Kang

DOI: https://doi.org/10.1021/acsami.9b04791

2019-05-29

Abstract:Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO2/Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS2) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS2 film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS2 were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.
Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction

Baojun Pan,Kenan Zhang,Changchun Ding,Zhen Wu,Qunchao Fan,Tingyan Luo,Lijie Zhang,Chao Zou,Shaoming Huang

DOI: https://doi.org/10.1021/acsami.0c08335

2020-07-10

Abstract:Two-dimensional transition-metal dichalcogenides (TMDs) have been one of the hottest focus of materials due to the most beneficial electronic and optoelectronic properties. Up to now, one of the big challenges is the synthesis of large-area layer-number-controlled single-crystal films. However, the poor understanding of the growth mechanism seriously hampers the progress of the scalable production of TMDs with precisely tunable thickness at an atomic scale. Here, the growth mechanisms in the vertical direction were systemically studied based on the density functional theory (DFT) calculation and an advanced chemical vapor deposition (CVD) growth. As a result, the U-type relation of the TMD layer number to the ratio of metal/chalcogenide is confirmed by the capability of ultrafine tuning of the experimental conditions in the CVD growth. In addition, high-quality uniform monolayer, bilayer, trilayer, and multilayer TMDs in a large area (8 cm2) were efficiently synthesized by applying this modified CVD. Although bilayer TMDs can be obtained at both high and low ratios of metal/chalcogenide based on the suggested mechanism, they demonstrate significantly different optical and electronic transport properties. The modified CVD strategy and the proposed mechanism should be helpful for synthesizing and large-area thickness-controlled TMDs and understanding their growth mechanism and could be used in integrated electronics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08335?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08335</a>.Detailed parameter of every growth situation in WS2 CVD growth process; the synchronous optical microscopy images of WS2 in the CVD growth process; binding energy of the WS3 cluster on WS2 crystal edge (before and after adsorbed WSO2); DFT results of the binding energy of different WSx clusters on the top surface (EbP) and edge (EbE) of WS2 crystal; and diffusion barriers of WS1 and WS3 clusters on the surface of WS2 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08335/suppl_file/am0c08335_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Yu Zhang,Yanfeng Zhang,Qingqing Ji,Jing Ju,Hongtao Yuan,Jianping Shi,Teng Gao,Donglin Ma,Mengxi Liu,Yubin Chen,Xiuju Song,Harold Y. Hwang,Yi Cui,Zhongfan Liu

DOI: https://doi.org/10.1021/nn403454e

IF: 17.1

2013-01-01

ACS Nano

Abstract:Atomically thin tungsten disulfide (WS2), a structural analogue to MoS2, has attracted great interest due to its indirect-to-direct band-gap tunability, giant spin splitting, and valley-related physics. However, the batch production of layered WS2 is underdeveloped (as compared with that of MoS2) for exploring these fundamental issues and developing its applications. Here, using a low-pressure chemical vapor deposition method, we demonstrate that high-crystalline mono- and few-layer WS2 flakes and even complete layers can be synthesized on sapphire with the domain size exceeding 50 × 50 μm(2). Intriguingly, we show that, with adding minor H2 carrier gas, the shape of monolayer WS2 flakes can be tailored from jagged to straight edge triangles and still single crystalline. Meanwhile, some intersecting triangle shape flakes are concomitantly evolved from more than one nucleus to show a polycrystalline nature. It is interesting to see that, only through a mild sample oxidation process, the grain boundaries are easily recognizable by scanning electron microscopy due to its altered contrasts. Hereby, controlling the initial nucleation state is crucial for synthesizing large-scale single-crystalline flakes. We believe that this work would benefit the controlled growth of high-quality transition metal dichalcogenide, as well as in their future applications in nanoelectronics, optoelectronics, and solar energy conversions.
Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Srinivas V. Mandyam,Meng Qiang Zhao,Paul Masih Das,Qicheng Zhang,Christopher C. Price,Zhaoli Gao,Vivek B. Shenoy,Marija Drndic,Alan T. Charlie Johnson

DOI: https://doi.org/10.48550/arXiv.1908.09013

2019-08-23

Materials Science

Abstract:Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 and 60o twist between the two layers, while moire 15 and 30o-twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides and promotes their applications in next-generation electronic and optoelectronic devices.
Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Chunxiao Cong,Jingzhi Shang,Xing Wu,Bingchen Cao,Namphung Peimyoo,Caiyu Qiu,Litao Sun,Ting Yu

DOI: https://doi.org/10.1002/adom.201300428

IF: 9

2014-01-01

Advanced Optical Materials

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs), especially MoS2 and WS2 recently attract extensive attentions due to their rich physics and great potential applications. Superior to graphene, MS2 (M = Mo/W) monolayers have a native direct energy gap in visible frequency range. This promises great future of MS2 for optoelectronics. To exploit properties and further develop more applications, producing large-scale single crystals of MS2 by a facile method is highly demanded. Here, we report the synthesis of large-scale triangular single crystals of WS2 monolayer from a chemical vapor deposition process and systematic optical studies of such WS2 monolayers. The observations of high yield of light emission and valley-selective circular dichroism experimentally evidence the high optical quality of the WS2 monolayers. This work paves the road to fabricate large-scale single crystalline 2D semiconductors and study their fundamentals. It must be very meaningful for exploiting great potentials of WS2 for future optoelectronics.
Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Chunxiao Cong,Jingzhi Shang,Xing Wu,Bingchen Cao,Namphung Peimyoo,Caiyu Qiu,Litao Sun,Ting Yu

DOI: https://doi.org/10.48550/arXiv.1312.1418

2013-12-05

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs), especially MoS2 and WS2 recently attract extensive attentions due to their rich physics and great potential applications. Superior to graphene, MS2 (M = Mo/W) monolayers have a native direct energy gap in visible frequency range. This promises great future of MS2 for optoelectronics. To exploit properties and further develop more applications, producing large-scale single crystals of MS2 by a facile method is highly demanded. Here, we report the synthesis of large-scale triangular single crystals of WS2 monolayer from a chemical vapor deposition process and systematic optical studies of such WS2 monolayers. The observations of high yield of light emission and valley-selective circular dichroism experimentally evidence the high optical quality of the WS2 monolayers. This work paves the road to fabricate large-scale single crystalline 2D semiconductors and study their fundamentals. It must be very meaningful for exploiting great potentials of WS2 for future optoelectronics.

Materials Science
Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

Pengyu Liu,Tao Luo,Jie Xing,Hong Xu,Huiying Hao,Hao Liu,Jingjing Dong

DOI: https://doi.org/10.1186/s11671-017-2329-9

2017-10-03

Nanoscale Research Letters

Abstract:High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Large-area synthesis of high-quality and uniform monolayer WS 2 on reusable Au foils

Yang Gao,Zhibo Liu,Dong-Ming Sun,Le Huang,Lai-Peng Ma,Li-Chang Yin,Teng Ma,Zhiyong Zhang,Xiu-Liang Ma,Lian-Mao Peng,Hui-Ming Cheng,Wencai Ren

DOI: https://doi.org/10.1038/ncomms9569

IF: 16.6

2015-01-01

Nature Communications

Abstract:Large-area monolayer WS 2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS 2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS 2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS 2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS 2 and WS 2 /graphene heterostructures, and batch fabrication of large-area flexible monolayer WS 2 film transistor arrays.
Controllable growth of bilayer WS2 by chemical vapor deposition and application for photodetectors

Sunwen Zhao,Yanhui Zhang,Shuang Wang,Dongyang Zhao,He Kang,Jing Li,Runhan Xiao,Ziqiang Kong,Zhiying Chen,Yanping Sui,Jianlu Wang,Yan Chen,Guanghui Yu

DOI: https://doi.org/10.1016/j.matlet.2022.132103

IF: 3

2022-01-01

Materials Letters

Abstract:WS2 is a promising material in the next generation integrated circuit applications and its electrical and optoelectronic characteristics is dependent on the number of layers. Here, a simple and scalable synthesis of WS2 bilayers via chemical vapor deposition (CVD) is demonstrated by finely controlling the time of introducing sulfur. The optical and microstructural characterization of the as-grown bilayer WS(2 )show a uniform single crystal quality. The photodetector based on bilayers WS2 exhibits relatively good performance.
Space-confined CVD growth of 2D-MoS2 crystals with tunable dimensionality via adjusting growth conditions

Li Fu

DOI: https://doi.org/10.1039/d0ce01711f

IF: 3.756

2021-01-01

CrystEngComm

Abstract:Two-dimensional MoS2 is demonstrated to be a prospective material for next-generation ultrathin nanoelectronics and optoelectronics. However, it remains an enormous challenge to fabricate high-yield, large-sized, and high-quality monolayered MoS2 crystals. Here, we present a feasible space-confined chemical vapor deposition method to grow 2D MoS2 flakes with tunable dimensionality. By tailoring the experimental parameters, such as growth temperature, the amount of S powder, and the distance between Mo foil and growth substrate/S powder, diverse MoS2 flakes with adjustable edge size can be obtained, and their corresponding thickness and crystalline quality have been evaluated by OM, AFM, Raman and PL techniques. Furthermore, the reason for the evolution of lateral dimension under tuned S amount and adjusted distance between Mo foil and S powder/growth substrate is revealed by the concentration variation of Mo : S. Our study presents an effective pathway to realize the controllable fabrication of 2D TMDC structures with tunable dimensionality via simply adjusting growth conditions.
Large-Scale 1T'-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Mitsuhiro Okada,Jiang Pu,Yung-Chang Lin,Takahiko Endo,Naoya Okada,Wen-Hsin Chang,Anh Khoa Augustin Lu,Takeshi Nakanishi,Tetsuo Shimizu,Toshitaka Kubo,Yasumitsu Miyata,Kazu Suenaga,Taishi Takenobu,Takatoshi Yamada,Toshifumi Irisawa

DOI: https://doi.org/10.1021/acsnano.2c05699

IF: 17.1

2022-08-23

ACS Nano

Abstract:The control of crystal polymorphism and exploration of metastable, two-dimensional, 1T'-phase, transition-metal dichalcogenides (TMDs) have received considerable research attention. 1T'-phase TMDs are expected to offer various opportunities for the study of basic condensed matter physics and for its use in important applications, such as devices with topological states for quantum computing, low-resistance contact for semiconducting TMDs, energy storage devices, and as hydrogen evolution catalysts. However, due to the high energy difference and phase change barrier between 1T' and the more stable 2H-phase, there are few methods that can be used to obtain monolayer 1T'-phase TMDs. Here, we report on the chemical vapor deposition (CVD) growth of 1T'-phase WS2 atomic layers from gaseous precursors, i.e., H2S and WF6, with alkali metal assistance. The gaseous nature of the precursors, reducing properties of H2S, and presence of Na+, which acts as a countercation, provided an optimal environment for the growth of 1T'-phase WS2, resulting in the formation of high-quality submillimeter-sized crystals. The crystal structure was characterized by atomic-resolution scanning transmission electron microscopy, and the zigzag chain structure of W atoms, which is characteristic of the 1T' structure, was clearly observed. Furthermore, the grown 1T'-phase WS2 showed superconductivity with the transition temperature in the 2.8-3.4 K range and large upper critical field anisotropy. Thus, alkali metal assisted gas-source CVD growth is useful for realizing large-scale, high-quality, phase-engineered TMD atomic layers via a bottom-up synthesis.
Growth of Single-crystalline Transition Metal Dichalcogenides Monolayers with Large-size

Ningxia Normal University,Jiao Liying

DOI: https://doi.org/10.1007/s40242-020-0188-x

IF: 3.1

2020-01-01

Chemical Research in Chinese Universities

Abstract:Two-dimensional(2D) transition metal dichalcogenides(TMDCs) semiconductors, such as monolayers of molybdenum disulfide(MoS2) and tungsten disulfide(WS2) can potentially serve as ultrathin channel materials for building short channel field-effect transistors(FETs) to further extend Moore's Law. It is essential to develop control-lable approaches for the synthesis of large single crystals of these 2D semiconductors to promote their practical applications in future electronics. In this short review, we summarized the recent advances on the chemical vapor deposition(CVD) of single crystalline semiconducting 2D TMDCs with a large size. We first discussed the driving force and urgent demands on developing controllable approaches for the growth of large 2D TMDCs single crystals and then summarized the current strategies and representative studies on the CVD growth of large 2D single crystals. Finally, we discussed the challenges and future directions in this topic.
Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Shisheng Li,Shunfeng Wang,Dai-Ming Tang,Weijie Zhao,Huilong Xu,Leiqiang Chu,Yoshio Bando,Dmitri Golberg,Goki Eda

DOI: https://doi.org/10.1016/j.apmt.2015.09.001

2015-09-02

Abstract:Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals requires steady flow of tungsten source in the vapor phase. This often requires high temperature and low pressure due to the high sublimation point of tungsten oxide precursors. We demonstrate atmospheric pressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC) using alkali metal halides (MX where M= Na or K and X=Cl, Br or I) as the growth promoters. We attribute the facilitated growth to the formation of volatile tungsten oxyhalide species during growth, which leads to efficient delivery of the precursor to the growth substrates. The monolayer crystals were found to be free of unintentional doping with alkali metal and halogen atoms. Good field-effect transistor (FET) performances with high current on/off ratio ~10 7, hole and electron mobilities up to 102 and 26 cm2 V 1 s-1 for WSe2 and electron mobility of ~14 cm2 V-1 s-1 for WS2 devices were achieved.

Materials Science,Mesoscale and Nanoscale Physics
Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2.

Hanjie Yang,Yang Wang,Xingli Zou,Rong-Xu Bai,Sheng Han,Zecheng Wu,Qi Han,Yu Zhang,Hao Zhu,Lin Chen,Xionggang Lu,Qingqing Sun,Jack C. Lee,Edward T. Yu,Deji Akinwande,Li Ji

DOI: https://doi.org/10.1021/acsami.1c13467

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Transition-metal dichalcogenides (TMDs) have attracted intense research interest for a broad range of device applications. Atomic layer deposition (ALD), a CMOS compatible technique, can enable the preparation of high-quality TMD films on 8 to 12 in. wafers for large-scale circuit integration. However, the ALD growth mechanisms are still not fully understood. In this work, we systematically investigated the growth mechanisms for WS2 and found them to be strongly affected by nucleation density and film thickness. Transmission electron microscope imaging reveals the coexistence and competition of lateral and vertical growth mechanisms at different growth stages, and the critical thicknesses for each mechanism are obtained. The in-plane lateral growth mode dominates when the film thickness remains less than 5.6 nm (8 layers), while the vertical growth mode dominates when the thickness is greater than 20 nm. From the resulting understanding of these growth mechanisms, the conditions for film deposition were optimized and a maximum grain size of 108 nm was achieved. WS2-based field-effect transistors were fabricated with electron mobility and on/off current ratio up to 3.21 cm2 V-1 s-1 and 105, respectively. Particularly, this work proves the capability of synthesis of TMD films in a wafer scale with excellent controllability of thickness and morphology, enabling many potential applications other than transistors, such as nanowire- or nanosheet-based supercapacitors, batteries, sensors, and catalysis.
Deterministic direct growth of WS2 on CVD graphene arrays

Giulia Piccinini,Stiven Forti,Leonardo Martini,Sergio Pezzini,Vaidotas Miseikis,Ulrich Starke,Filippo Fabbri,Camilla Coletti

DOI: https://doi.org/10.48550/arXiv.1911.01101

2019-11-04

Materials Science

Abstract:The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In this work, we report the direct growth of monolayer WS2 via chemical vapor deposition (CVD) on single-crystal graphene arrays on SiO2. Remarkably, spectroscopic and microscopic characterization reveals that WS2 grows only on top of the graphene crystals so that the vertical heterostack is selectively obtained in a bottom-up fashion. Spectroscopic characterization indicates that, after WS2 synthesis, graphene undergoes compressive strain and hole doping. Tailored experiments show that such hole doping is caused by the modification of the SiO2 stoichiometry at the graphene/SiO2 interface during the WS2 growth. Electrical transport measurements reveal that the heterostructure behaves like an electron-blocking layer at large positive gate voltage, which makes it a suitable candidate for the development of unipolar optoelectronic components.

CVD controlled growth of large-scale WS<sub>2</sub> monolayers

CVD Controlled Growth of Large-Scale WS2 Monolayers

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

ZnO-Controlled Growth of Monolayer WS2 Through Chemical Vapor Deposition

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

Large-area synthesis of high-quality and uniform monolayer WS 2 on reusable Au foils

Controllable growth of bilayer WS<sub>2</sub> by chemical vapor deposition and application for photodetectors

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Large-Scale 1T'-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Growth of Single-crystalline Transition Metal Dichalcogenides Monolayers with Large-size

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Growth Mechanisms and Morphology Engineering of Atomic Layer-Deposited WS2.

Deterministic direct growth of WS2 on CVD graphene arrays