Large-area synthesis of high-quality and uniform monolayer WS 2 on reusable Au foils

Yang Gao,Zhibo Liu,Dong-Ming Sun,Le Huang,Lai-Peng Ma,Li-Chang Yin,Teng Ma,Zhiyong Zhang,Xiu-Liang Ma,Lian-Mao Peng,Hui-Ming Cheng,Wencai Ren
DOI: https://doi.org/10.1038/ncomms9569
IF: 16.6
2015-01-01
Nature Communications
Abstract:Large-area monolayer WS 2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS 2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS 2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS 2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS 2 and WS 2 /graphene heterostructures, and batch fabrication of large-area flexible monolayer WS 2 film transistor arrays.
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