Abstract:Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe2) is one typical example with p-type semiconductor characteristics. Bulk WSe2 has an indirect band gap (∼1.2 eV), which transits into a direct band gap (∼1.65 eV) in monolayers. Monolayer WSe2, therefore, is of considerable interest as a new electronic material for functional electronics and optoelectronics. However, the controllable synthesis of large-area WSe2 atomic layers remains a challenge. The studies on WSe2 are largely limited by relatively small lateral size of exfoliated flakes and poor yield, which has significantly restricted the large-scale applications of the WSe2 atomic layers. Here, we report a systematic study of chemical vapor deposition approach for large area growth of atomically thin WSe2 film with the lateral dimensions up to ∼1 cm2. Microphotoluminescence mapping indicates distinct layer dependent efficiency. The monolayer area exhibits much stronger light emission than bilayer or multilayers, consistent with the expected transition to direct band gap in the monolayer limit. The transmission electron microscopy studies demonstrate excellent crystalline quality of the atomically thin WSe2. Electrical transport studies further show that the p-type WSe2 field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm2 V–1 s–1 for monolayer and up to 350 cm2 V–1 s–1 for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe2 and comparable to the best exfoliated materials.

Large-scale Synthesis of WSe2 Atomic Layers on SiO2/Si

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Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

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Large-area synthesis of high-quality and uniform monolayer WS 2 on reusable Au foils

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Synthesis Of Wafer-Scale Wse2 By Wox Selenization On Sio2 / Si Substrates

Ultrafast Self-Limited Growth of Strictly Monolayer Wse2 Crystals

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Large-area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates.

Chemical Vapor Deposition of Large‐Sized Hexagonal WSe2 Crystals on Dielectric Substrates

Patterned growth of tungsten diselenide flakes by chemical vapor deposition

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Monolayer Crystals: Ultrafast Self-Limited Growth of Strictly Monolayer WSe<sub>2</sub> Crystals (Small 41/2016)

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains