Abstract:Two-dimensional layered transition-metal dichalcogenides (TMDs) have attracted intense interest for their layer number-dependent electronic properties and have exciting potential for atomically thin electronics and optoelectronics. The studies to date have primarily been limited to exfoliated materials with limited control of the size, layer number, and yield. Despite considerable efforts to date, it remains a significant challenge to produce large-sized TMD single crystals with precise control of the layer number. Here, we report the robust growth of high-quality WSe2 single-crystal domains with a selectively controlled thickness in a reverse-flow chemical vapor deposition system with a solid precursor. By introducing a pre-annealing step to tune elemental distribution and volatilization rate of the solid precursor, we stabilize the vapor supply to achieve a highly uniform nucleation and growth, and thus ensure the precise control of the layer number for the highly selective growth of monolayer or bilayer WSe2 single crystals (>500 μm). The transmission electron microscopy and optical characterizations of the resulting WSe2 single crystals exhibit excellent crystalline quality with systematically tunable optical properties. Electrical transport studies further show that the WSe2 field-effect transistors exhibit p-type semiconductor characteristics with effective hole carrier mobility up to 92 cm2 V–1 s–1 in monolayer and 145 cm2 V–1 s–1 in bilayer materials at room temperature. This simple approach opens up a new avenue for the highly controlled synthesis of WSe2 atomic layers for both fundamental studies and technological applications.

Monolayer Crystals: Ultrafast Self-Limited Growth of Strictly Monolayer WSe<sub>2</sub> Crystals (Small 41/2016)

Ultrafast Self-Limited Growth of Strictly Monolayer Wse2 Crystals

Controllable synthesis of monolayer WSe 2 crystals by Copper-Assisted chemical vapor deposition

Ultrafast growth of single-crystalline Si nanowires

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Origin of Ultrafast Growth of Monolayer WSe2 Via Chemical Vapor Deposition

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Large-scale Synthesis of WSe2 Atomic Layers on SiO2/Si

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Large‐Size Monolayer MoSe 2 Single Crystals: Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe 2 Single Crystals on Low‐Cost Soda‐Lime Glass (Adv. Mater. Interfaces 12/2021)

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Epitaxial Growth of Monolayer WS 2 Single Crystals on Au(111) Toward Direct Surface-Enhanced Raman Spectroscopy Detection

Epitaxial Growth of High-Quality Monolayer MoS 2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer