Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Epitaxial Growth of Monolayer WS 2 Single Crystals on Au(111) Toward Direct Surface-Enhanced Raman Spectroscopy Detection

Epitaxial Growth of Monolayer WS2 Single Crystals on Au(111) Toward Direct Surface-Enhanced Raman Spectroscopy Detection

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Epitaxial Growth of High-Quality Monolayer MoS 2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

(Invited) Epitaxial Growth of Transition Metal Dichalcogenide Monolayers for Large Area Device Applications

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Unveiling the Origin of Anomalous Low-Frequency Raman Mode in CVD-grown Monolayer WS2

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Epitaxy of 2D Materials toward Single Crystals

Mechanism of substrate-induced anisotropic growth of monolayer WS2 by kinetic Monte Carlo simulations

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire