Abstract:Owing to their exceptional properties, which are usually determined by the growth conditions, 2D transition metal dichalcogenides (TMDCs) offer numerous research directions for applications in the fields of spintronics, valleytronics, and optoelectronics. Here, we focus on the chemical vapor deposition (CVD) synthesis of WSe2 (tungsten diselenide) nanoclusters/nanoflakes by using a liquid precursor for tungsten (ammonium metatungstate) on Si/SiO2, fused silica, and sapphire substrates. Various WSe2 clusters with different sizes, thicknesses, and geometries were analyzed by means of optical and atomic force microscopy (AFM) and Raman spectroscopy. The observed structures were mostly WSe2 multilayers; however, monolayer formations were also found. They showed significant morphological differences, as well as wide nucleation density and size variations, possibly related to precursor/substrate surface interactions under the same CVD synthesis conditions. The largest WSe2 domains with a lateral size of up to hundreds of micrometers were observed on sapphire, probably caused by a higher growth rate of singular nucleation sites. WSe2 domains with irregular and triangular shapes were simultaneously identified on fused silica, whereas multilayered pyramidal WSe2 structures dominated in the case of Si/SiO2 substrates. The application of polarized Raman spectroscopy to precisely determine and differentiate the characteristic vibrational modes (A1g, E2g, and 2LA(M)) enabled the unambiguous identification of 2D and/or multilayered WSe2 formations with a high crystallinity level. The presented comparative analysis of samples prepared in relatively simple synthesis conditions (moderate working temperatures and ambient pressure) provides a base for further progress of the facile metatungstate CVD method and relevant opportunities for the exploration of 2D TMDC materials.

Patterned growth of tungsten diselenide flakes by chemical vapor deposition

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Chemical Vapor Deposition of Large‐Sized Hexagonal WSe2 Crystals on Dielectric Substrates

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

Large-scale Synthesis of WSe2 Atomic Layers on SiO2/Si

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-Like WSe2 by Sulfur-Assisted Chemical Vapor Deposition

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Metatungstate Chemical Vapor Deposition of WSe2: Substrate Effects, Shapes, and Morphologies

Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Synthesis Of Wafer-Scale Wse2 By Wox Selenization On Sio2 / Si Substrates

Synthesis of wafer-scale WSe<inf>2</inf> by WO<inf>x</inf> selenization on SiO<inf>2</inf> / Si substrates

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Controllable growth α-In2Se3 flakes by chemical vapor deposition

Ultrafast Self-Limited Growth of Strictly Monolayer Wse2 Crystals