Abstract:To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiOx remains attractive. Here we show a facile confinement CVD approach in which we simply “sandwich” two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Deterministic direct growth of WS2 on CVD graphene arrays

Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Mixed Multilayered Vertical Heterostructures Utilizing Strained Monolayer WS2.

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Superlubricity of epitaxial monolayer WS2 on graphene

Carbon-nanoparticle-assisted Growth of High Quality Bilayer WS2 by Atmospheric Pressure Chemical Vapor Deposition

CVD Controlled Growth of Large-Scale WS2 Monolayers

Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Mechanism of substrate-induced anisotropic growth of monolayer WS2 by kinetic Monte Carlo simulations

Electrodeposited WS$_2$ Monolayers on Fabricated Graphene Electrodes

Enhancing dielectric passivation on monolayer WS 2 via a sacrificial graphene oxide seeding layer

Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate.

Metal-catalyst-free and Controllable Growth of High-Quality Monolayer and AB-stacked Bilayer Graphene on Silicon Dioxide

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure