Abstract:The controllable large‐area growth of single‐crystal vertical heterostructures based on 2D transition metal dichalcogenides (TMDs) remains a challenge. Here, large‐area vertical MoS2/WS2 heterostructures are synthesized using single‐step confined‐space chemical vapor epitaxy. The heterostructures can evolve into two different kinds by switching the H2 flow on and off: MoS2/WS2 heterostructures with multiple WS2 domains can be achieved without introducing the H2 flow due to the numerous nucleation centers on the bottom MoS2 monolayer during the transition stage between the MoS2 and WS2 monolayer growth. In contrast, isolated MoS2/WS2 heterostructures with single WS2 domain can be obtained with introducing the H2 flow due to the reduced nucleation centers on the bottom MoS2 monolayer arising from the hydrogen etching effect. Both the two kinds of the vertical MoS2/WS2 heterostructures feature high quality. The photodetectors based on the isolated MoS2/WS2 heterostructures exhibit a high responsivity of 68 mA W−1 and a short response time of 35 ms. This single‐step chemical vapor epitaxy can be used to synthesize vertical MoS2/WS2 heterostructures with high production efficiency. The new epitaxial growth approach may open new pathways to fabricate large‐area heterostructures made of different 2D TMDs monolayers of interest to electronics, optoelectronics, and other applications.

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3−x thin film sulfurization

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of Mos2/Graphene Heterostructures

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Facile synthesis of two-dimensional MoS2/WS2 lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Defects in monolayer WS2 grown via sulfurization of WSe2

Enhancing dielectric passivation on monolayer WS 2 via a sacrificial graphene oxide seeding layer

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Deterministic direct growth of WS2 on CVD graphene arrays

Controllable Water Vapor Assisted Chemical Vapor Transport Synthesis of WS2-MoS2 Heterostructure

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Mechanism of substrate-induced anisotropic growth of monolayer WS2 by kinetic Monte Carlo simulations

Metallo‐Hydrogel‐Assisted Synthesis and Direct Writing of Transition Metal Dichalcogenides

Controllable Epitaxial Growth of Large‐Area MoS 2 /WS 2 Vertical Heterostructures by Confined‐Space Chemical Vapor Deposition