Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) are excellent candidates for high-performance optoelectronics due to their high carrier mobility, air stability and strong optical absorption. However, photodetectors made with monolayer TMDs often exhibit high dark current, and thus, there is a scope for further improvement. Herein, we have developed a 2D bilayer tungsten disulfide (WS2) based photodetector (PD) with asymmetric contacts that exhibits an exceptionally low dark current and high specific detectivity. High-quality and large-area monolayer and bilayer WS2 flakes were synthesized by a thermal chemical vapor deposition system. Compared to conventional symmetric contact electrodes, utilizing metal electrodes with higher and lower work functions relative to bilayer WS2 aids in achieving asymmetric lateral doping in the WS2 flakes. This doping asymmetry was confirmed through photoluminescence spectral profile and Raman mapping analysis. With the asymmetric contacts on bilayer WS2, we find evidence of selective doping of electrons and holes near the Ti and Au contacts, respectively, while the WS2 region away from the contacts remains intrinsic. When compared with the symmetric contacts case, the dark current in the WS2 PD with asymmetric (Au, Ti) contacts case decreases by an order of magnitude under reverse bias with a concomitant increase in the photocurrent, resulting in an improved on/off ratio of ~105 and overall improved device performance under identical illumination conditions. We explain this improved performance based on the energy band alignment showing unidirectional charge flow under light illumination. Our results indicate that the planar device structure and compatibility with current nanofabrication technologies can facilitate its integration into advanced chips for futuristic low-power optoelectronic and nanophotonic applications.

Controllable growth of bilayer WS<sub>2</sub> by chemical vapor deposition and application for photodetectors

Wafer-scale synthesis of monolayer WS 2 for high-performance flexible photodetectors by enhanced chemical vapor deposition

Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition

Carbon-nanoparticle-assisted Growth of High Quality Bilayer WS2 by Atmospheric Pressure Chemical Vapor Deposition

Growth of a Large, Single-Crystalline WS2 Monolayer for High-Performance Photodetectors by Chemical Vapor Deposition

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition

A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors

A Bilayer 2D-WS 2 /Organic-Based Heterojunction for High-Performance Photodetectors.

A Bilayer 2D-WS<sub>2</sub>/Organic-Based Heterojunction for High-Performance Photodetectors

Insight into the Role of H 2 in WS 2 Growth by Chemical Vapor Deposition

Oriented Epitaxial Growth of Mixed-Dimensional van der Waals Heterostructures with One-Dimensional (1D) Bi 2 S 3 Nanowires and Two-Dimensional (2D) WS 2 Monolayers for Performance-Enhanced Photodetectors

ZnO-Controlled Growth of Monolayer WS2 Through Chemical Vapor Deposition

Oriented Epitaxial Growth of Mixed-Dimensional Van Der Waals Heterostructures with One-Dimensional (1D) Bi2S3 Nanowires and Two-Dimensional (2D) WS2 Monolayers for Performance-Enhanced Photodetectors

Direct Bilayer Growth: a New Growth Principle for a Novel WSe2 Homo-Junction and Bilayer WSe2 Growth.

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Ultrafast and hypersensitized detection based on van der Waals connection in two-dimensional WS2/Si structure

CVD controlled growth of large-scale WS<sub>2</sub> monolayers

Ultrathin 2d Photodetectors Utilizing Chemical Vapor Deposition Grown Ws2 with Graphene Electrodes

Asymmetric contact-induced selective doping of CVD-grown bilayer WS2 and its application in high-performance photodetection with ultralow dark current