Abstract:Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasma-assisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AIN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

Low-Frequency Noise In Gan Thin Films Deposited By Rf-Plasma Assisted Molecular-Beam Epitaxy

Study of Low-Frequency Excess Noise in Gan Thin Films Deposited by Rf-Mbe on Intermediate-Temperature Buffer Layers

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

Nature of Low-Frequency Excess Noise in N-Type Gallium Nitride

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Study of Low-Frequency Excess Noise in Rta Annealed N-Type Gallium Nitride

Effects of Intermediate-Temperature Buffer Layers on Low-Frequency Noise Performance of Gan Based Schottky Barriers

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

Study of the Effects of Rapid Thermal Annealing in Generation–recombination Noise in MBE Grown GaN Thin Films

Growth of High Quality GaN Thin Films by MBE on Intermediate-temperature Buffer Layers

Low‐frequency Noise Characterizations on Ni/GaN Schottky Diodes Deposited on Intermediate‐temperature Buffer Layers

Influence of GaN Polarity and Intermediate-Temperature Buffer Layers on Strain Relaxation and Defects

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

1/F Noise in GaN/AlGaN HEMTs

Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

Properties of low-temperature-deposited GaN buffer layers

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene