Abstract:Molecular beam epitaxy (MBE) is demonstrated as an excellent growth technique for growing a low-defect GaN channel layer, which is crucial for controlling vertical leakage current and improving breakdown voltage (BV) in GaN-based high-electron mobility transistors (HEMTs). The 3D islands to 2D growth mode transition approach was induced by modulating substrate growth temperature (Tsub), displaying an overall improvement in film quality. A comprehensive investigation was conducted into the effects of Tsub on surface morphologies, crystal quality, and the optical and electrical properties of GaN films. Optimal results were achieved with a strain-relaxed GaN film grown at 690 °C, exhibiting significantly improved surface characteristics (root-mean-square roughness, Rq = 0.3 nm) and impressively reduced edge dislocations. However, the film with the smoothest surface roughness, attributed to the effect of the Ga-rich condition, possessed a high surface pit density, negatively affecting optical and electrical properties. A reduction in defect-related yellow emission further confirmed the enhanced crystalline quality of MBE GaN films. The optimized GaN film demonstrated outstanding electrical properties with a BV of ~1450 V, surpassing that of MOCVD GaN (~1180 V). This research significantly contributes to the advancement of MBE GaN-based high electron mobility transistor (HEMT) applications by ensuring outstanding reliability.

Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

Growth of High Quality GaN Thin Films by MBE on Intermediate-temperature Buffer Layers

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

Study of Low-Frequency Excess Noise in Gan Thin Films Deposited by Rf-Mbe on Intermediate-Temperature Buffer Layers

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Influence of GaN Buffer Layer for InN Growth

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Effects of Intermediate-Temperature Buffer Layers on Low-Frequency Noise Performance of Gan Based Schottky Barriers

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Improving Optical and Electrical Characteristics of GaN Films via 3D Island to 2D Growth Mode Transition Using Molecular Beam Epitaxy

Characterization of Deep Levels in Pt-GaN Schottky Diodes Deposited on Intermediate-Temperature Buffer Layers

Properties of low-temperature-deposited GaN buffer layers

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

Characterization Of Gan Thin Films On Hvpe Gan Templates

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS