Abstract:Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasma-assisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AIN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Effects of Intermediate-Temperature Buffer Layers on Low-Frequency Noise Performance of Gan Based Schottky Barriers

Low‐frequency Noise Characterizations on Ni/GaN Schottky Diodes Deposited on Intermediate‐temperature Buffer Layers

Characterization of Deep Levels in Pt-GaN Schottky Diodes Deposited on Intermediate-Temperature Buffer Layers

Study of Low-Frequency Excess Noise in Gan Thin Films Deposited by Rf-Mbe on Intermediate-Temperature Buffer Layers

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

Low-Frequency Noise In Gan Thin Films Deposited By Rf-Plasma Assisted Molecular-Beam Epitaxy

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

Growth of High Quality GaN Thin Films by MBE on Intermediate-temperature Buffer Layers

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

1/F Noise in GaN/AlGaN HEMTs

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Properties of low-temperature-deposited GaN buffer layers

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Effect of different layer structures on the RF performance of GaN HEMT devices