Abstract:We report systematic investigations on hot-electron degradation in GaN-based HEMTs with different gate recess depths, d r , fabricated by reactive ion etching. The experimental data stipulate two different mechanisms underlying the hot-electron degradations of the devices. During the initial phase of hot-electron injection significant changes were observed in the dc characteristics of the devices and the flicker noise power spectral density, SV(f).The degradations were partially recovered by annealing the devices at 100°C for 20 minutes. It is shown that for stress time ts≤25 hours the reverse bias gate current, IG, decreases systematically with ts, whereas SV(f) fluctuates randomly. Detailed analyses of SV(f) measured over a wide range temperatures show that the initial degradations originate from the percolation of carriers in the 2DEG. The significant increase in the flicker noise during the initial phase of high-voltage stress is due to the generation of H+ at the AlGaN/GaN interface. The fluctuations in the magnitudes of SV(f) for ts≤25 hours originate from the motion of the H+ in the direction of the electric field. This results in the modulation of the percolation path leading to significant variations in SV(f) as a function of ts. For ts>25 hours both IG and SV(f) are stabilized resulting from the drifting of the H+ away from the gate region. Further stressing beyond 25 hours indicate strong dependencies of the device lifetimes on dr suggesting significant material degradation due to the reactive ion etching process for the fabrication of the gate recesses. Detailed characterization of the noise show that the final irreversible degradation is due to the generation of traps at the AlGaN/GaN interface.

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Study of Low-Frequency Excess Noise in Rta Annealed N-Type Gallium Nitride

Low-Frequency Noise In Gan Thin Films Deposited By Rf-Plasma Assisted Molecular-Beam Epitaxy

1/F Noise in GaN/AlGaN HEMTs

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

Study of Low-Frequency Excess Noise in Gan Thin Films Deposited by Rf-Mbe on Intermediate-Temperature Buffer Layers

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Study of the Effects of Rapid Thermal Annealing in Generation–recombination Noise in MBE Grown GaN Thin Films

Characterization of 1/f Noise in GaN-based HEMTs under High Dc Voltage Stress (invited Paper)

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Low-Frequency Noise Characterization of Hot-Electron Degradation in Gan-Based Hemts

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs under Electrical and Thermal Stress

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature

Model for Low-Temperature Growth of Gallium Nitride

Temperature Dependent Low-Frequency Noise Characteristics of AlGaN Avalanche Photodiodes with Ultra-Shallow Bevel Edge Termination

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors