Abstract:We report systematic investigations on hot-electron degradation in GaN-based HEMTs with different gate recess depths, d r , fabricated by reactive ion etching. The experimental data stipulate two different mechanisms underlying the hot-electron degradations of the devices. During the initial phase of hot-electron injection significant changes were observed in the dc characteristics of the devices and the flicker noise power spectral density, SV(f).The degradations were partially recovered by annealing the devices at 100°C for 20 minutes. It is shown that for stress time ts≤25 hours the reverse bias gate current, IG, decreases systematically with ts, whereas SV(f) fluctuates randomly. Detailed analyses of SV(f) measured over a wide range temperatures show that the initial degradations originate from the percolation of carriers in the 2DEG. The significant increase in the flicker noise during the initial phase of high-voltage stress is due to the generation of H+ at the AlGaN/GaN interface. The fluctuations in the magnitudes of SV(f) for ts≤25 hours originate from the motion of the H+ in the direction of the electric field. This results in the modulation of the percolation path leading to significant variations in SV(f) as a function of ts. For ts>25 hours both IG and SV(f) are stabilized resulting from the drifting of the H+ away from the gate region. Further stressing beyond 25 hours indicate strong dependencies of the device lifetimes on dr suggesting significant material degradation due to the reactive ion etching process for the fabrication of the gate recesses. Detailed characterization of the noise show that the final irreversible degradation is due to the generation of traps at the AlGaN/GaN interface.

Study of Low-Frequency Excess Noise in Rta Annealed N-Type Gallium Nitride

Nature of Low-Frequency Excess Noise in N-Type Gallium Nitride

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

Low-Frequency Noise In Gan Thin Films Deposited By Rf-Plasma Assisted Molecular-Beam Epitaxy

1/F Noise in GaN/AlGaN HEMTs

Study of the Effects of Rapid Thermal Annealing in Generation–recombination Noise in MBE Grown GaN Thin Films

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Study of Low-Frequency Excess Noise in Gan Thin Films Deposited by Rf-Mbe on Intermediate-Temperature Buffer Layers

Characterization of 1/f Noise in GaN-based HEMTs under High Dc Voltage Stress (invited Paper)

Influence of Isochronal Annealing on the Evolution of Hole Traps in GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Low-Frequency Noise Characterization of Hot-Electron Degradation in Gan-Based Hemts

Defect Evolution in Annealed P-Type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Temperature Dependent Low-Frequency Noise Characteristics of AlGaN Avalanche Photodiodes with Ultra-Shallow Bevel Edge Termination

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs under Electrical and Thermal Stress

High Frequency Noise Model of AlGaN/GaN HEMTs

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors