Abstract:Density functional theory calculations have been carried out to investigate single-layer phosphorene functionalized with two kinds of organic molecules, i.e., an electrophilic molecule tetracyano-p-quinodimethane (TCNQ) as electron acceptor and a nucleophilic molecule tetrathiafulvalene (TTF) as electron donor. The TCNQ molecule introduces shallow acceptor states in the gap of phosphorene close to the valence band edge, which makes the doped system become a p-type semiconductor. However, when the TTF molecule is adsorbed on the phosphorene, the occupied molecular states introduced into the gap are of deep donor states so that effective n-doping for transport cannot be realized. This disadvantageous situation can be amended by applying an external out-of-plane electric field with direction from phosphorene to TTF, or an in-plane tensile strain, or their combination, under which the conduction band edge of the phosphorene moves closer to the TTF-derived donor states, and then the TTF-adsorbed phosphorene system becomes an n-type semiconductor. It is also noted that the out-of-plane electric field and in-plane strain can modulate the band gap of the TTF-adsorbed phosphorene markedly. The effective bipolar doping of single-layer phosphorene via molecular adsorption, especially n-doping against its native p-doping propensity, and the good response of band gap in the infrared waveband of the TTF-adsorbed phosphorene to the out-of-plane electric field and in-plane strain would broaden the way to the application of this new type of two-dimensional material in nanoelectronic and optoelectronic devices.

Density Functional Theory Study on Influence of Tensile Deformation and Electric Field on Electrical Properties of Si Atom Adsorbed on Black Phosphorene

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain

The Phosphorene Under The External Electronic Field And Strain

Semiconductor-metal Transition Induced by Combined Electric Field and External Strain in Bilayer Phosphorene

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Effect of tensile deformation on the optoelectronic properties of black phosphine-doped lithium atoms

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Geometric and Electronic Structures at the Interface Between Iron Phthalocyanine and Si (110)

Deformation-induced band gap variation in phosphorene: tight-binding model vs. first-principles simulations

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Enhanced Hydrophilic and Conductive Properties of Blue Phosphorene Doped with Si Atom

Correction to “A First-Principles Study on Electron Donor and Acceptor Molecules Adsorbed on Phosphorene”

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Pressure-induced Lifshitz transition in black phosphorus

Interaction Between Phosphorene and the Surface of A Substrate

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

First-principles study of the influence of torsional deformation on the electronic structure and optical properties of B absorbed silicene

Density functional theory study on boron- and phosphorus-doped hydrogen-passivated silicene.