Abstract:One of the challenges of silicon quantum dots (Si QDs) in practical application as quantum dot-based light-emitting diodes is the irreversible degradation induced by humid conditions, revealing their excited state electronic properties strongly influenced by the surface water, however, the photoluminescence (PL) mechanism associated with the change of excited state electronic properties remains elusive. Here, we performed the time-dependent density functional theory calculations to investigate how the PL of Si29H36, as a typically spherical Si QDs, is determined by the dipole-dipole interaction between water molecules and different surface substituent groups. Relative to the hydrophobic group of pure hydrogen passivation, the substituent effect with a hydrogen atom replaced by a fluorine atom almost has no influence on the PL of Si QDs as the adsorption of water clusters. Interestingly, although a hydrophilic hydroxyl group substitution itself will partly change the surface state with the slight blue-shift of PL, the intensive dipole-dipole interaction between a hydroxyl group and water molecules can drastically induce the delocalized electron to be localized, resulting in a dual-band peak observed in the PL spectra of the Si29H35OH surrounded by four or five water molecules. This distinct PL mechanism originates from the adsorption of water molecules through dipole-dipole interaction inducing the existence of surface trap states. The presence of highly polarizable double-bonded oxygen will trigger the electron distribution centered on the silicon-oxygen double bond, resulting in the corresponding PL spectrum of Si29H35O unaffected by the water molecules. This study reveals that the PL of Si QDs with the substituent hydroxyl group is extremely sensitive to humidity and lays a foundation for the practical application of Si QDs as optoelectronic devices.

Enhanced Hydrophilic and Conductive Properties of Blue Phosphorene Doped with Si Atom

Tuning electronic and magnetic properties of blue phosphorene by doping Al, Si, As and Sb atom: A DFT calculation

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

Density Functional Theory Study on Influence of Tensile Deformation and Electric Field on Electrical Properties of Si Atom Adsorbed on Black Phosphorene

Molecular Structure and Dynamics of Water on Pristine and Strained Phosphorene: Wetting and Diffusion at Nanoscale

Density functional theory study on boron- and phosphorus-doped hydrogen-passivated silicene.

Tunable Electronic Structure and Enhanced Optical Properties of Blue Phosphorene Via Adsorption of Alkali Metal Atoms

First-principles study of CO and NO adsorption on pristine and transition metal doped blue phosphorene

H2 O incorporation in the phosphorene/a-SiO2 interface: A first-principles study

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Water on silicene: A hydrogen bond-autocatalyzed physisorption–chemisorption–dissociation transition

Substitutionally doped phosphorene: electronic properties and gas sensing.

Wetting and Diffusion of Water on Pristine and Strained Phosphorene

Interaction Between Phosphorene and the Surface of A Substrate

Achieving indirect-to-direct band gap transition and enhanced photocatalytic performance in blue phosphorene through doping and strain

Origin of Humidity Influencing the Excited State Electronic Properties of Silicon Quantum Dots based Light-emitting Diodes

Water on Silicene: Hydrogen Bond Autocatalysis Induced Physisorption-Chemisorption-Dissociation Transition

Surface Charge Transfer Doping of Monolayer Phosphorene via Molecular Adsorption.

First-principles Study of the Interactions of Electron Donor and Acceptor Molecules with Phosphorene