Abstract:Tuning band gaps in two-dimensional (2D) materials is of great interest for the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in the design and optimization of electronic and optoelectronic devices. Here, based on density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized in the topmost BP layer and this surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards a higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum Γ1c (valence band minimum Γ8v) downwards (upwards). The present prediction of Γ1c and Γ8v as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed in an angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Electronic and Transport Properties of N -Type Monolayer Black Phosphorus at Low Temperatures

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices*

Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Recent Developments in Black Phosphorus Transistors

In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Ultralow-frequency Collective Compression Mode and Strong Interlayer Coupling in Multilayer Black Phosphorus

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Bandgap Modulation in BP Field Effect Transistor and Its Applications

Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

Band Structure Engineering of Black Phosphorus/Graphene/MoS2 Van Der Waals Heterojunctions for Photovoltaic and Optoelectronic Device Application