A Novel Programmable Variation-Tolerant RRAM-based Delay Element Circuit

Kangqiang Pan,Amr M. S. Tosson,Norman Y. Zhou,Lan Wei
DOI: https://doi.org/10.1109/nanoarch53687.2021.9642239
2021-01-01
Abstract:A programmable delay element (DE) circuit based on Resistive Random-Access Memory (RRAM) with delay range from ~100 ps to ~1 ns is proposed. Impacts of RRAM resistance on delay range and power consumption of the circuit are analyzed. An improved circuit structure utilizing RRAMs in parallel is proposed to reduce impact of RRAM variability to DE circuit.
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