Abstract:This work presents a highly reliable and tamper-resistant design of Physical Unclonable Function (PUF) exploiting Resistive Random Access Memory (RRAM). The RRAM PUF properties such as uniqueness and reliability are experimentally measured on 1 kb HfO 2 based RRAM arrays. Firstly, our experimental results show that selection of the split reference and offset of the split sense amplifier (S/A) significantly affect the uniqueness. More dummy cells are able to generate a more accurate split reference, and relaxing transistor's sizes of the split S/A can reduce the offset, thus achieving better uniqueness. The average inter-Hamming distance (HD) of 40 RRAM PUF instances is ~42%. Secondly, we propose using the sum of the read-out currents of multiple RRAM cells for generating one response bit, which statistically minimizes the risk of early retention failure of a single cell. The measurement results show that with 8 cells per bit, 0% intra-HD can maintain more than 50 hours at 150 °C or equivalently 10 years at 69 °C by 1/kT extrapolation. Finally, we propose a layout obfuscation scheme where all the S/A are randomly embedded into the RRAM array to improve the RRAM PUF's resistance against invasive tampering. The RRAM cells are uniformly placed between M4 and M5 across the array. If the adversary attempts to invasively probe the output of the S/A, he has to remove the top-level interconnect and destroy the RRAM cells between the interconnect layers. Therefore, the RRAM PUF has the “self-destructive” feature. The hardware overhead of the proposed design strategies is benchmarked in 64 × 128 RRAM PUF array at 65 nm, while these proposed optimization strategies increase latency, energy and area over a naive implementation, they significantly improve the performance and security.

A Time-delay based RRAM PUF Circuit

A Highly Reliable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source

A Highly Reliable and Tamper-Resistant RRAM PUF: Design and Experimental Validation.

A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications

Design and optimization of strong Physical Unclonable Function (PUF) based on RRAM array

Experimental Characterization of Physical Unclonable Function Based on 1 kb Resistive Random Access Memory Arrays

Exploiting resistive cross-point array for compact design of physical unclonable function

A novel PUF against machine learning attack: Implementation on a 16 Mb RRAM chip

A Homogeneous, Reconfigurable, and Efficient Implementation of PUF in 3-D Selector-Free RRAM

A High Area-Efficiency RRAM-Based Strong PUF with Multi-Entropy Source and Configurable Double-Read Process

A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices

Optimization of Rram-Based Physical Unclonable Function with A Novel Differential Read-Out Method

Extending 1kb RRAM array from weak PUF to strong PUF by employment of SHA module

A Novel Bi-functional Memory-PUF Module Utilizing Adjustable Switching Window of RRAM

An Ultracompact Switching-Voltage-Based Fully Reconfigurable RRAM PUF with Low Native Instability

A 28nm 512kb Adjacent 2T2R RRAM PUF with Interleaved Cell Mirroring and Self-Adaptive Splitting for Extremely Low Bit Error Rate of Cryptographic Key.

A Novel PUF Based on Cell Error Rate Distribution of STT-RAM

A Novel RRAM Based PUF for Anti-Machine Learning Attack and High Reliability

A Physically Unclonable Function with BER < 0.35% for Secure Chip Authentication Using Write Speed Variation of RRAM.

25.2 A Reconfigurable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source with <6×10−6 Native Bit Error Rate

A Unified Memory and Hardware Security Module Based on the Adjustable Switching Window of Resistive Memory