A Homogeneous, Reconfigurable, and Efficient Implementation of PUF in 3-D Selector-Free RRAM

Yiming Wang,Qiang Huo,Xiaoxin Xu,Fei Tan,Rui Gao,Qing Luo,Yiming Yang,Qirui Ren,Xiaojin Zhao,Xinghua Wang,Dengyun Lei,Feng Zhang

DOI: https://doi.org/10.1109/ted.2021.3066087

IF: 3.1

2021-05-01

IEEE Transactions on Electron Devices

Abstract:Hardware encryption primitives such as physical unclonable functions (PUFs) are used in power and cost limited Internet of Things (IoT) and computing on edge devices. Resistive random access memory (RRAM) PUF is proposed as an alternative to CMOS one. But due to the existence of transistors as selectors, it still shares the drawbacks of CMOS PUF. In this work, a homogeneous and efficient PUF was constructed out of 3-D selector-free RRAM. It is immune to ray attack and fault injection and features low power, thanks to the absence of transistors and high-resistance states of the RRAM cells. The inter- and intra-Hamming distances (HDs) are measured to be 50.02% and 0%, respectively, which well validates its uniqueness and reliability. Experimental results show that the proposed PUF can be operated with a low energy consumption of 144 fJ/bit, and a compact bit-cell area of 16 $text{F}^{{2}}$ /bit. The digital values in the cells can maintain for over 100 h at 85 °C, which is equivalent to 24 years under 40 °C. Besides, given that the selector-free structure renders the PUF instance homogeneous, the PUF instance has enhanced security performance against radiation.

engineering, electrical & electronic,physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to implement efficient, reliable and secure hardware encryption primitives - Physical Unclonable Functions (PUFs) in Internet of Things (IoT) devices. Although traditional PUFs based on CMOS technology have good compatibility, they are vulnerable to radiation attacks and have limitations in terms of low - power consumption and area efficiency. In addition, selectors (such as transistors) in traditional memories may become weaknesses to external attacks and radiation effects. To overcome these shortcomings, this paper proposes a PUF implementation method based on three - dimensional selector - free resistive random - access memory (3 - D selector - free RRAM). This new - type PUF not only avoids the selectors in the traditional structure, thereby improving the resistance to radiation, but also achieves higher integration and energy efficiency through a multi - layer structure and advanced manufacturing processes. Experimental results show that this PUF has an ideal Hamming Distance (HD), namely a mutual HD of 50.02% and an intra - HD of 0%, indicating its good uniqueness and reliability. In addition, this PUF can retain data for 100 hours at 85 °C, which is equivalent to 24 years at 40 °C, demonstrating its excellent stability and durability. In terms of energy consumption, the working energy efficiency of the PUF instance is 144 fJ/bit, and the bit - cell area is 16 $F^2$/bit, showing its advantages in area and power efficiency. In conclusion, this paper aims to improve the security, reliability and energy efficiency of IoT devices by designing a new 3 - D selector - free RRAM PUF, while enhancing their resistance to radiation attacks.

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