Abstract:Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-the-art computing systems, to a large extent, result from the well-known von-Neumann bottleneck. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications such as artificial intelligence, machine learning, and cryptography. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable in-memory Boolean computations. In this paper, we present an augmented version of the conventional SRAM bit-cells, called the X-SRAM, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations, including NAND, NOR, IMP (implication), XOR logic gates, with respect to different bit-cell topologies − the 8T cell and the 8+T Differential cell. In addition, we also present a novel ‘read-compute-store’ scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using the predictive transistor models and detailed Monte-Carlo variation analysis. As an illustration, we also present the efficacy of the proposed in-memory computations by implementing advanced encryption standard algorithm on a non-standard von-Neumann machine wherein the conventional SRAM is replaced by X-SRAM. Our simulations indicated that up to 75% of memory accesses can be saved using the proposed techniques.

The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process

A Novel DES Encryption Circuit Based on RRAM XOR Gates

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

Application of Resistive Random Access Memory in Hardware Security: A Review

Resistive Memory for Computing and Security: Algorithms, Architectures, and Platforms

A 9 Transistor SRAM Featuring Array-level XOR Parallelism with Secure Data Toggling Operation

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

Security Enhancement for RRAM Computing System through Obfuscating Crossbar Row Connections

Simulation of serial RRAM cell based on a Verilog-A compact model

Configurable in-memory computing architecture based on dual-port SRAM

Parallel Stateful Logic in RRAM: Theoretical Analysis and Arithmetic Design

Integrated Architecture for Neural Networks and Security Primitives using RRAM Crossbar

Design of High-Speed Logic Circuits with Four-Step RRAM-Based Logic Gates.

A Compact Model for Relaxation Effect in Analog RRAM for Computation-in-Memory System Design and Benchmark

RRAM-Based Hardware Security Primitives

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

RTN Impacts on RRAM-based Nonvolatile Logic Circuit