Abstract:Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-the-art computing systems, to a large extent, result from the well-known von-Neumann bottleneck. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications such as artificial intelligence, machine learning, and cryptography. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable in-memory Boolean computations. In this paper, we present an augmented version of the conventional SRAM bit-cells, called the X-SRAM, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations, including NAND, NOR, IMP (implication), XOR logic gates, with respect to different bit-cell topologies − the 8T cell and the 8+T Differential cell. In addition, we also present a novel ‘read-compute-store’ scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using the predictive transistor models and detailed Monte-Carlo variation analysis. As an illustration, we also present the efficacy of the proposed in-memory computations by implementing advanced encryption standard algorithm on a non-standard von-Neumann machine wherein the conventional SRAM is replaced by X-SRAM. Our simulations indicated that up to 75% of memory accesses can be saved using the proposed techniques.

A 9 Transistor SRAM Featuring Array-level XOR Parallelism with Secure Data Toggling Operation

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

An 11T SRAM Cell for the Dual-Direction In-Array Logic/CAM Operations

Configurable in-memory computing architecture based on dual-port SRAM

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

A 28-Nm Compute SRAM with Bit-Serial Logic/Arithmetic Operations for Programmable In-Memory Vector Computing

Augmented Memory Computing: Dynamically Augmented SRAM Storage for Data Intensive Applications

FAST: A Fully-Concurrent Access Technique to All SRAM Rows for Enhanced Speed and Energy Efficiency in Data-Intensive Applications

A 10T SRAM with Two Read and Write Modes Across Row and Column for CAM Operation and Computing In-Memory

Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports

-Memory Computing Based Reliable and High Speed Schmitt trigger 10T SRAM cell design

14.2 A Compute SRAM with Bit-Serial Integer/Floating-Point Operations for Programmable In-Memory Vector Acceleration

CMOS-based Single-Cycle In-Memory XOR/XNOR

FAST: A Fully-Concurrent Access SRAM Topology for High Row-Wise Parallelism Applications Based on Dynamic Shift Operations

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications

ROBIN: Monolithic-3D SRAM for Enhanced Robustness with In-Memory Computation Support