Abstract:Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect transistors (FeFETs). A comparative studies of various conventional neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed by successful realization of the proposed computing approaches. Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von-Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are getting developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer a rich set of device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect Transistors (FeFETs). A comparative studies of various unconventional and brain-inspired neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed for these device technologies.

Resistive Memory for Computing and Security: Algorithms, Architectures, and Platforms

Application of Resistive Random Access Memory in Hardware Security: A Review

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

An overview of critical applications of resistive random access memory

RRAM/memristor for Computing

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Integrated Architecture for Neural Networks and Security Primitives using RRAM Crossbar

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Resistive Random Access Memory: A Review of Device Challenges

Resistive Random Access Memory for Future Information Processing System.

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

RRAM-Based Hardware Security Primitives

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Recent advances in inorganic oxides-based resistive random-access memory devices

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Memristor-based RRAM with Applications

Resistive RAM:A Novel Generation Memory Technology

A Logic Resistive Memory Chip for Embedded Key Storage with Physical Security

Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices

Novel 2D Materials-based Resistive Devices