Abstract:Resistive random access memory (RRAM)-based neuromorphic hardware accelerators are attractive platforms for neural network acceleration due to their high energy efficiency. However, the inherent variations of RRAM, arising from diffusion or recombination of oxygen vacancies, can cause significant conductance deviation from the target value, resulting in noticeable performance degradation. In practical ex situ training, write-verify methods are widely adopted to avoid this issue when transferring a trained network model. However, the intense reading and reprogramming operations make the conventional write-verify methods require extensive programming time and energy. In this brief, for the first time, we propose a novel write-verify scheme that can transfer each weight with a different acceptable error margin to achieve a high-speed and high-efficiency write-verify scheme while maintaining network performance. Our experimental results show that the speed and energy efficiency of the write-verify process can be improved significantly, by up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mathbf {\times } 3.4\mathbf {\mathrm {\sim }} \mathbf {\times }9.0$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mathbf {\times } 4.1\mathbf {\mathrm {\sim }} \mathbf {\times }14.1$ </tex-math></inline-formula> , respectively.

COPS: an Efficient and Reliability-Enhanced Programming Scheme for Analog RRAM and On-Chip Implementation of Denoising Diffusion Probabilistic Model

Mitigating RC-Delay Induced Accuracy Loss in Analog In-Memory Computing: A Non-Compromising Approach

A Parallel Multibit Programing Scheme with High Precision for RRAM-Based Neuromorphic Systems

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

A Circuit-Algorithm Codesign Method to Reduce the Accuracy Drop of RRAM Based Computing-in-memory Chip

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

Optimization Strategy for Accelerating Multi-Bit Resistive Weight Programming on the RRAM Array

Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM

ASAP: an Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell

Compact Reliability Model of Analog RRAM for Computation-in-Memory Device-to-System Codesign and Benchmark

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

A High-Speed and High-Efficiency Diverse Error Margin Write-Verify Scheme for an RRAM-Based Neuromorphic Hardware Accelerator

Progress in Development of Resistive RAM Peripheral Circuit

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

Neural Network-Inspired Analog-to-Digital Conversion to Achieve Super-Resolution with Low-Precision RRAM Devices

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Computation-oriented Fault-Tolerance Schemes for RRAM Computing Systems

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

A 28 Nm RRAM-Based 81.1 TOPS/mm2/bit Compute-In-Memory Macro with Uniform and Linear 64 Read Channels under 512 4-Bit Inputs