Abstract:Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance afforded by Moore's law. Training DNNs is an extremely memory-intensive process, requiring not just the model weights but also activations and gradients for an entire minibatch to be stored. The need to provide high-density and low-leakage on-chip memory motivates the exploration of emerging non-volatile memory for training accelerators. Spin-Transfer-Torque MRAM (STT-MRAM) offers several desirable properties for training accelerators, including 3-4x higher density than SRAM, significantly reduced leakage power, high endurance and reasonable access time. On the one hand, MRAM write operations require high write energy and latency due to the need to ensure reliable switching. In this study, we perform a comprehensive device-to-system evaluation and co-optimization of STT-MRAM for efficient ML training accelerator design. We devised a cross-layer simulation framework to evaluate the effectiveness of STT-MRAM as a scratchpad replacing SRAM in a systolic-array-based DNN accelerator. To address the inefficiency of writes in STT-MRAM, we propose to reduce write voltage and duration. To evaluate the ensuing accuracy-efficiency trade-off, we conduct a thorough analysis of the error tolerance of input activations, weights, and errors during the training. We propose heterogeneous memory configurations that enable training convergence with good accuracy. We show that MRAM provide up to 15-22x improvement in system level energy across a suite of DNN benchmarks under iso-capacity and iso-area scenarios. Further optimizing STT-MRAM write operations can provide over 2x improvement in write energy for minimal degradation in application-level training accuracy.

A High-Speed and High-Efficiency Diverse Error Margin Write-Verify Scheme for an RRAM-Based Neuromorphic Hardware Accelerator

Robustness of Neuromorphic Computing with RRAM-based Crossbars and Optical Neural Networks.

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A Parallel Multibit Programing Scheme with High Precision for RRAM-Based Neuromorphic Systems

On-Chip Write & Verify and Endurance Enhancer Circuits Towards Multi-level RRAM Array

EFFICIENT WEIGHT MAPPING SCHEME WITHOUT VERIFICATION FOR RRAM BASED NEUROMORPHIC COMPUTING

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Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

Compensation Architecture to Alleviate Noise Effects in RRAM-based Computing-in-memory Chips with Residual Resource

Compensation Architecture Design Utilizing Residual Resource to Mitigate Impacts of Nonidealities in RRAM-based Computing-in-memory Chips

Fast and Accurate Weight Updating Strategy for Resistive Random-Access Memory (Rram)-Based Neural Networks

Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

Evaluation of STT-MRAM as a Scratchpad for Training in ML Accelerators

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

A Circuit-Algorithm Codesign Method to Reduce the Accuracy Drop of RRAM Based Computing-in-memory Chip

Weighted Synapses Without Carry Operations for RRAM-Based Neuromorphic Systems

LayCO: Achieving Least Lossy Accuracy for Most Efficient RRAM-Based Deep Neural Network Accelerator via Layer-Centric Co-Optimization

Hardware Implementation Of Rram Based Binarized Neural Networks

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator