Abstract:GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of GaN power transistors require special treatment. In this work we review a unique and critical property of GaN power transistors, the dynamic threshold voltage (V th). GaN power transistors feature a p-GaN gate structure, while the gate metal contacts the p-GaN layer through a Schottky junction. This unique p-GaN gate structure is distinctively different from the silicon metal–oxide–semiconductor gate structure in that the p-GaN layer is actually a floating region without direct electrical contact to the external electrodes of the device. The floating p-GaN layer enables a charge storage process during the switching operation of a p-GaN gate high-electron-mobility transistor. Through carefully designed experiments, the strong correlation between charge storage and the dynamic V th shift has been revealed; this also serves as an approach to accurately predict the dynamic V th during switching operation. The influence of the dynamic V th on power switching applications is discussed. For example, with a positive dynamic V th shift, the reverse conduction voltage of a GaN power transistor is significantly increased, adding to the power loss. This positive V th shift also demands a sufficiently high gate drive voltage to ensure that the GaN power transistor can be fully turned on, which reduces the safety margin for the gate reliability of the device. To design a GaN based power switching circuit, accurate simulation of the device/circuit characteristics is necessary. Circuit simulations that do not consider the dynamic V th lead to a large deviation from the measurement circuit characteristics. We demonstrate that by incorporating the dynamic V th into the circuit model this deviation can be effectively eliminated.

Dynamic Trapping Related Hysteresis of Effective Output Capacitance in Overvoltage Transients of GaN E-mode Devices

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Trap-Related Current Collapse Effects in GaN HEMTs

Rapid Detection of Capture and Emission Processes in Surface and Buffer Traps: Understanding Dynamic Degradation in GaN Power Devices

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Analysis of trapping effect in GaN HEMT modeling

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Dynamic OFF-State Current (dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -Gan Gate HEMTs with an Ohmic Gate Contact

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices