Abstract:Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

Nitrogen Plasma Etching and Surface Passivation of GaAs Via Plasma-Enhanced Atomic Layer Deposition

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Nitridation of GaAs(001) Using N2-RF Plasma

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

Nitride Passivation Of The Interface Between High-K Dielectrics And Sige

Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Effective Surface Passivation of Algan/Gan Heterostructures by Using Ph3 Plasma Treatment and Hfo2 Dielectric

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth

The surface and photoluminescence properties of GaAs passivated by wet chemical method

Characterization of Atomic-Layer-deposited Al2O3∕GaAs Interface Improved by NH3 Plasma Pretreatment

Surface State Passivation and Optical Properties Investigation of GaSb Via Nitrogen Plasma Treatment

Surface Passivation of the Ge Substrate by Novel Nitrogen Plasma Immersion Treatment

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al 2 O 3 Thin Films Grown by Atomic Layer Deposition