Abstract:This study investigates the effect of O2 plasma treatment on the physical and electrical properties of the surface region in Schottky-gate AlGaN/GaN high electron mobility transistor (HEMT). We demonstrate that O2 plasma treatment significantly reduces the gate leakage current and enhances the on/off ratio by three orders of magnitude compared to devices without treatment. The O2 plasma treatment removes organic chemical residue and forms Ga-O bonds on the AlGaN surface beneath the gate metal. X-ray photoelectron spectroscopy (XPS) results indicate that the treatment effectively forms a Ga-O compound oxide layer, which provides surface passivation. Furthermore, atomic force microscope (AFM) analysis reveals a 50% reduction in surface roughness after the O2 plasma treatment. Using O2 plasma oxidation treatment caused a shift in the threshold voltage (VTH) of Schottky-gate AlGaN/GaN HEMT. Initially measured at -5.26 V, the VTH value shifted to +0.5 V. Furthermore, we also employ TCAD simulation to assist in the process developed during the manufacturing process. It is worth noting that the drain current decreases as the Ga-O compound oxide layer increases. This is due to effectively depleted the polarization charges at the AlGaN/GaN interfaces during E-mode operation when reducing the thickness of the AlGaN layer beneath the gate metal. Our results demonstrate the importance of O2 plasma surface treatment in achieving optimal device performance. This study systematically discusses the effect of O2 plasma on AlGaN/GaN surface properties and the formation of Ga-O bonding. It offers insights into developing high-performance Schottky-gate AlGaN/GaN HEMT.

Effective Surface Passivation of Algan/Gan Heterostructures by Using Ph3 Plasma Treatment and Hfo2 Dielectric

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Effect of Surface Passivation Process for AlGaN/GaN HEMT Heterostructures Using Phenol Functionalized-Porphyrin Based Organic Molecules

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Effect of Surface Treatment on Electrical Properties of GaN Metal–insulator–semiconductor Devices with Al2O3 Gate Dielectric

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

On The Redox Origin Of Surface Trapping In Algan/Gan High Electron Mobility Transistors

Investigating the effect of O2 plasma treatment on the operational characteristics of schottky-gate AlGaN/GaN HEMT

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Effective electrical passivation of Ge(100) for HfO 2 gate dielectric layers using O 2 plasma

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Nitrogen Plasma Etching and Surface Passivation of GaAs Via Plasma-Enhanced Atomic Layer Deposition

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures