Abstract:Electrical switching of magnetization is central to spintronics. Despite the enormous efforts on the spin torques and the Dzyaloshinskii-Moriya interaction (DMI) effects, some fundamental physics for electrical switching of magnetization is still missing as indicated by a number of remarkable long-standing puzzles. Here, we report the discovery of the long-range intralayer DMI effect widely existing in magnetic heterostructure, which is distinct from the yet-known DMI effects as it describes the chiral coupling of two orthogonal magnetic domains within the same magnetic layer via the mediation of an adjacent heavy metal layer. The long-range intralayer DMI generates a strong perpendicular effective magnetic field (H_DMI^z) on the perpendicular magnetization. Characteristically, H_DMI^z varies with the sign/magnitude of the interfacial DMI constant, the applied in-plane magnetic fields, and the distribution of the perpendicular magnetic anisotropy. The long-range intralayer DMI results in striking consequences including the strongly asymmetric current/field switching of perpendicular magnetization, hysteresis loop shift of perpendicular magnetization in the absence of in-plane direct current, and sharp, complete switching of perpendicular magnetization purely by an in-plane magnetic field. Utilizing the long-range intralayer DMI effect, we demonstrate programable, complete Boolean logic operations (i.e., AND, NAND, NOT, OR, and NOR) within a single spin-orbit torque device. These results will stimulate the investigation of the long-range intralayer DMI effect and its impacts on a variety of spintronic devices.

Purely Electrical Controllable Complete Spin Logic in a Single Magnetic Heterojunction

Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages

Fully electrical controllable spin-orbit torque based half-adder

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Electrical-controllable antiferromagnet-based tunnel junction

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Strongly asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents

Optical Control of Magnetism in NiFe/VO2 Heterostructures

Field-free switching of magnetization induced by spin–orbit torque in Pt/CoGd/Pt thin film

An Ultrathin Flexible Programmable Spin Logic Device Based on Spin-Orbit Torque.

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

Purely magnetic logic based on polarized spin waves

Complementary logic operation based on electric-field controlled spin-orbit torques

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Frontiers in all electrical control of magnetization by spin orbit torque

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects