Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent P‐type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid‐Infrared Ranges

Gang Gao,Lijia Tong,Lei Yang,Chunqiang Sun,Liangge Xu,Zhenhuai Yang,Peng Wang,Fangjuan Geng,Fei Xia,Hao Gong,Jiaqi Zhu
DOI: https://doi.org/10.1002/pssr.202100273
2021-01-01
physica status solidi (RRL) - Rapid Research Letters
Abstract:The development of advanced transparent electrical devices has created an urgent demand for wide‐bandgap transparent semiconductors. Herein, a simple, low‐cost ink‐based method for preparation of LaCuOS is introduced. High transmittances of above 60% and 65% at visible (380–750 nm) and mid‐infrared (3–5 μm) wavelengths, respectively, are obtained with LaCuOS films prepared using this ink. With these films, the carrier concentration is above 1018 cm−3, while a conductivity of 5 S cm−1 is obtained, electrical properties that are both higher than those of most transparent p‐type semiconductors. From density functional theory calculations, it is surmised that the improved conductivity of the LaCuOS is a result of its high carrier concentration, and its hole effective mass, which is smaller than that of typical transparent p‐type semiconductors.
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