Abstract:Aluminum nitride thin film can be applied as a high-temperature material because of its excellent heat resistance and thermal conductivity, and high mechanical strength. In addition, application and application to surface acoustic wave devices using piezoelectric properties are expected, and it is known as a material that can replace ZnO. To obtain excellent crystal orientation, the residual stress behavior inside the thin film should be fully evaluated and identified. In this study, AlN thin films were deposited by the conventional PM sputtering method and the Two-Facing-Target (TFT) PM sputtering method using BLC glass and quartz glass with different thermal expansion coefficients as substrates. In the process of cooling the fabricated thin film, the effect of the difference in the coefficient of thermal expansion with the substrate on the residual stress of the thin film and the effect of the substrate temperature on the properties of the thin-film structure and the residual stress when the thin film was deposited were investigated. The AlN thin film deposited on the glass substrate by the conventional PM sputtering method showed a crystal structure in which the c -axis was preferentially oriented in the normal direction of the substrate surface, the same as the AlN thin film produced by the two-facing-target PM sputtering method. The AlN thin film deposited on the glass substrate had a crystal structure in which the c -axis was preferentially oriented in the normal direction to the substrate, and the c -axis orientation showed excellent c -axis orientation when the substrate temperature was higher than 523 K. In the case of the quartz glass substrate, the increase of the tensile residual stress was evident as the substrate temperature increased, and the effect of the thermal residual stress was confirmed.

Stress Relaxation of Three Dimensional Textured AlN Films on Sapphire Substrate by Rapid Thermal Annealing

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Minimizing residual stress of aluminum nitride (AlN) thin films using multi-step deposition of DC pulsed sputtering

Rapid Thermal Annealing of TI-ALN Interfaces

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Stress Induced Microstructure Evolution of Aln: Er Film at Different Annealing Temperature

Residual Stress of AlN Films RF Sputter Deposited on Si(111) Substrate

Residual Stress in AlN Films Grown on Sapphire Substrates by Molecular Beam Epitaxy

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

Fabrication of Crack-Free Aln Film on Sapphire by Hydride Vapor Phase Epitaxy Using an in Situ Etching Method

The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire