Phase Transition, Infrared Spectra, And Microwave Dielectric Properties Of Temperature-Stable Casnsi1-Xge(X)O(5) Ceramics

Kang Du,Chang-Zhi Yin,Yan-Bo Guo,Chao Zhang,Xiao-Chuan Wang,Wen-Zhong Lu,Wen Lei

DOI: https://doi.org/10.1016/j.ceramint.2021.05.202

IF: 5.532

2021-01-01

Ceramics International

Abstract:The CaSnSi1-xGexO5 (0 < x < 1.0) microwave dielectric ceramics were prepared using traditional solid reaction sintered at 1450 degrees C-1500 degrees C for 5 h, and the substitution of Ge4+ for Si4+ formed the CaSnSi1-xGexO5 solid solution at 0 < x < 1.0. The phase transition from monoclinic with A2/a space group to triclinic with A1 space group at CaSnSi1-xGexO5 ceramics was clarified by Rietveld refinement and high-resolution transmission electron microscopy/selected area diffraction. The crystal structure, X-ray diffraction patterns, and microwave dielectric properties (epsilon r = 11.28, Q x f = 72,900 GHz at 11.62 GHz, and tau f = -62.9 ppm/degrees C) of novel single-phase CaSnGeO5 ceramic were initially reported. In single-phase area, the increase in SnO6 octahedral distortion could reduce the tau f value of CaSnSi1-xGexO5 ceramics (0 < x < 0.6) to near zero. In multiphase area, the near-zero tau f value (tau f = +5.2 ppm/degrees C) was obtained at x = 0.7. The remarkable change between +5.2 ppm/degrees C (x = 0.7) and -77.8 ppm/degrees C (x = 0.8) of tau f value was attributed to the appearance of epsilon r anomaly peak (T1 = 125 degrees C). The optimal microwave dielectric properties (epsilon r = 11.70, Q x f = 37,900 GHz at 12.6 GHz, and tau f = +5.2 ppm/degrees C) of CaSnSi1-xGexO5 ceramics were obtained at x = 0.7.