The relationship between crystal structure and modified microwave dielectric properties of Ca 3 SnSi 2‐ x Ge x O 9 ceramics

Kang Du,Chang‐Zhi Yin,Yan‐Bo Guo,Xiao‐Chuan Wang,Wen‐Zhong Lu,Shi‐Wo Ta,Chun‐Yuan Hu,Wen Lei

DOI: https://doi.org/10.1111/jace.18174

IF: 4.186

2021-10-30

Journal of the American Ceramic Society

Abstract:Ca3SnSi2-xGexO9 (0 ≤ x ≤ 0.8) and (1–y) Ca3SnSi1.6Ge0.4O9 – y CaSnSiO5 – 2 wt% LiF (y = 0.4 and 0.5) microwave dielectric ceramics were prepared by traditional solid-state reaction through sintering at 1250°C–1425°C for 5 h and at 875°C for 2 h, respectively. Ge4+ replaced Si4+, and Ca3SnSi2-xGexO9 (0 ≤ x ≤ 0.4) solid solutions were obtained. At 0.1 ≤ x ≤ 0.4, the Ge4+ substitution for Si4+ decreased the sintering temperature of Ca3SnSi2-xGexO9 from 1425°C to 1300°C, the SnO6 octahedral distortions, and the average CaO7 decahedral distortions, which affected the τf value. The large average decahedral distortions corresponded with nearer-zero τf values at Ca3SnSi2-xGexO9 (0.1 ≤ x ≤ 0.4) ceramics. The τf value and sintering temperature of Ca3SnSi2-xGexO9 (x = 0.4) ceramic were adjusted to near-zero by CaSnSiO5 and decreased to 875°C upon the addition of 2 wt% LiF. The (1–y) Ca3SnSi1.6Ge0.4O9 – y CaSnSiO5 – 2 wt% LiF (y = 0.5) ceramic sintered at 875°C for 2 h exhibited good microwave dielectric properties: εr = 10.3, Q×f = 14,300 GHz (at 12.2 GHz), and τf = ‒5.8 ppm/°C.This article is protected by copyright. All rights reserved

materials science, ceramics