Phase transition, infrared spectra, and microwave dielectric properties of temperature-stable CaSnSi1-Ge O5 ceramics

Kang Du,Chang-Zhi Yin,Yan-Bo Guo,Chao Zhang,Xiao-Chuan Wang,Wen-Zhong Lu,Wen Lei

DOI: https://doi.org/10.1016/j.ceramint.2021.05.202

IF: 5.532

2021-05-01

Ceramics International

Abstract:The CaSnSi1-x Ge x O5 (0 ≤ x ≤ 1.0) microwave dielectric ceramics were prepared using traditional solid reaction sintered at 1450 °C-1500 °C for 5 h, and the substitution of Ge4+ for Si4+ formed the CaSnSi1-x Ge x O5 solid solution at 0 ≤ x ≤ 1.0. The phase transition from monoclinic with A2/a space group to triclinic with A 1 ‾ space group at CaSnSi1-x Ge x O5 ceramics was clarified by Rietveld refinement and high-resolution transmission electron microscopy/selected area diffraction. The crystal structure, X-ray diffraction patterns, and microwave dielectric properties (ε r = 11.28, Q × f = 72,900 GHz at 11.62 GHz, and τ f  = −62.9 ppm/°C) of novel single-phase CaSnGeO5 ceramic were initially reported. In single-phase area, the increase in SnO6 octahedral distortion could reduce the τ f value of CaSnSi1-x Ge x O5 ceramics (0 ≤ x ≤ 0.6) to near zero. In multiphase area, the near-zero τ f value (τ f  = +5.2 ppm/°C) was obtained at x = 0.7. The remarkable change between +5.2 ppm/°C (x = 0.7) and −77.8 ppm/°C (x = 0.8) of τ f value was attributed to the appearance of ε r anomaly peak (T1 = 125 °C). The optimal microwave dielectric properties (ε r = 11.70, Q × f = 37,900 GHz at 12.6 GHz, and τ f  = +5.2 ppm/°C) of CaSnSi1-x Ge x O5 ceramics were obtained at x = 0.7.

materials science, ceramics