Phase evolution, crystal structure, and microwave dielectric properties of gillespite‐type ceramics

Xiao‐Qiang Song,Wen Lei,Fei Wang,Tao Chen,Shi‐Wo Ta,Zhen‐Xiao Fu,Wen‐Zhong Lu
DOI: https://doi.org/10.1111/jace.17564
IF: 4.186
2020-12-11
Journal of the American Ceramic Society
Abstract:<p>A gillespite‐structured <i>M</i>CuSi<sub>4</sub>O<sub>10</sub> (<i>M</i> = Ba<sub>1‐</sub><i><sub>x</sub></i>Sr<i><sub>x</sub></i>, Sr<sub>1‐</sub><i><sub>x</sub></i>Ca<i><sub>x</sub></i>) ceramics with tetrahedral structure (P4/ncc) were prepared by solid state reaction method. X‐ray diffraction and thermogravimetry with differential scanning calorimetry (TG‐DSC) were employed to study the phase synthesis process of BaCuSi<sub>4</sub>O<sub>10</sub>. Pure BaCuSi<sub>4</sub>O<sub>10</sub> phase was obtained at 1075 °C and decomposed into BaSiO<sub>3</sub>, BaCuSi<sub>2</sub>O<sub>6</sub>, and SiO<sub>2</sub> when calcined at 1200 °C. The relationships between the crystal structure and microwave dielectric properties of <i>M</i>CuSi<sub>4</sub>O<sub>10</sub> ceramics were revealed based on the Rietveld refinement and P‐V‐L complex chemical bond theory. The dielectric constant (<i>ε</i><sub>r</sub>) decreased linearly with decreasing total bond susceptibility and ionic polarizability. Quality factor (<i>Q</i>×<i>f</i>) was closely dependent on bond strength and lattice energy. The temperature coefficient of resonant frequency (<i>τ<sub>f</sub></i>) was controlled by the stability of [CuO<sub>4</sub>]<sup>6‐</sup> plane in <i>M</i>CuSi<sub>4</sub>O<sub>10</sub>. Optimum microwave dielectric properties were obtained for SrCuSi<sub>4</sub>O<sub>10</sub> when sintered at 1100 °C for 3 h with a <i>ε</i><sub>r</sub> of 5.59, a <i>Q</i>×<i>f</i> value of 82252 GHz and a <i>τ<sub>f</sub></i> of ‐41.34 ppm/°C. Thus, SrCuSi<sub>4</sub>O<sub>10</sub> is a good candidate for millimeter‐wave devices.</p>
materials science, ceramics
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