Abstract:Two-dimensional (2D) MoS2 has been intensively investigated for its use in the fields of microelectronics, nanoelectronics, and optoelectronics. However, intrinsic 2D MoS2 is usually used as the n-type semiconductor due to the unintentional sulfur vacancies and surface gas adsorption. The synthesis and characterization of the 2D MoS2 semiconductor of p-type is crucial for the development of relevant p-n junction devices, as well as the practical applications of 2D MoS2 in the next-generation CMOS integrated circuit. Here, we synthesize Eb high-quality, wafer-scale, 2D p-type MoS2 (Mo1-xNbxS2) with various niobium (Nb) mole fractions from 0 to 7.6% by a creative two-step method. The dielectric functions of 2D Mo1-xNbxS2 are accurately determined by spectroscopic ellipsometry. We find that the increasing fraction of Nb dopant in 2D MoS2 can modulate and promote the combination of A and B exciton peaks of 2D MoS2. The direct causes of this impurity-tunable combination are interpreted as the joint influence of decreasing peak A and broadening peak B. We explain the broadening peak B as the multiple transitions from the impurity-induced valence bands to the conductive band minimum at K point of Brillouin zone by comparing and analyzing the simulated electronic structure of intrinsic and 2D Nb-doped MoS2. A p-type FET based on the 2D Nb-doped MoS2 was fabricated for characterization, and its working performance is expected to be adjustable as a function of concentration of Nb dopant according to our theoretical research. Our study is informative for comprehending optical and electronic properties of extrinsic 2D transitional metal dichalcogenides, which is important and imperative for the development and optimization of corresponding photonics and optoelectronics devices.

2D Niobium-Doped MoS2: Tuning the Exciton Transitions and Potential Applications

Controllable P-Type Doping of 2D MoS2via Sodium Intercalation for Optoelectronics

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Electrical Properties Of Compound 2d Semiconductor Mo1-Xnbxs2

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Effect of niobium doping on excitonic dynamics in MoSe 2

Two-dimensional electronic transport and surface electron accumulation in MoS2

Tuning Electrical and Optical Properties of MoSe2 Transistors Via Elemental Doping

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Ab initio study of bilateral doping within the MoS2-NbS2 system

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Stoichiometry modulated tunable optoelectronic properties of Nb-doped WS2 synthesized by chemical vapor deposition method

Theoretical prediction of the electronic structure, optical properties and contact characteristics of type-I MoS2/MoGe2N4 heterostructure towards optoelectronic devices

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

Vapor growth of V-doped MoS2 monolayers with enhanced B-exciton emission and broad spectral response

Substitutionally Doped MoSe 2 for High‐Performance Electronics and Optoelectronics

P-type Ohmic contacts of MBenes with MoS2 for nanodevices and logic circuits

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation